Datasheet > FMY68N60S1A

FMY68N60S1A

更新时间： 2024-03-03 10:11:25

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	1272K
描述
TO-247

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中文翻译

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数据手册

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FMY68N60S1A 数据手册

Automotive

FUJI POWER MOSFET

FMY68N60S1A

http://www.fujielectric.com/products/semiconductor/

Allowable Power Dissipation

PD=f(Tc)

600

500

400

300

200

100

Tc [℃]

100

125

150

Typical Output Characteristics

I^D=f(VDS):80us pulse test, Tch=25℃

Typical Output Characteristics

I^D=f(VDS):80us pulse test, Tch=150℃

250

200

150

100

150

10V

20V

10V

20V

100

5.5V

VGS=4.5V

VDS[V]

Typical Drain-Source on-state Resistance

R^DS(on)=f(ID):80us pulse test. Tch=150℃

RDS(on)=f(ID):80us pulse test. Tch=25℃

0.20

0.10

4.5V

5.5V

0.08

0.06

0.04

0.02

0.00

0.15

0.10

0.05

0.00

10V

V^GS=20V

VGS=20V

100

150

100

150

200

250

ID[A]

I^D[A]

1 234 5 6 7 8

中文翻译

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