Datasheet > FMY68N60S1A

FMY68N60S1A

更新时间： 2024-03-03 10:11:25

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	1272K
描述
TO-247

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FMY68N60S1A 数据手册

Automotive

FUJI POWER MOSFET

FMY68N60S1A

http://www.fujielectric.com/products/semiconductor/

Electrical Characteristics at T

=25°C (unless otherwise speciﬁed)

• Static Ratings

Description

Symbol

Conditions

Min.

Typ.

Max.

Unit

=250μA

GS=0V

Drain-Source Breakdown Voltage

BV^DSS

600

=250μA

DS=VGS

Gate Threshold Voltage

GS(th)

2.5

3.0

3.5

DS=600V

GS=0V

=25°C

Zero Gate Voltage Drain Current

DSS

μA

DS=480V

GS=0V

=125°C

GS= ± 30V

DS=0V

Gate-Source Leakage Current

GSS

100

0.040

=34A

GS=10V

Drain-Source On-State Resistance

DS(on)

0.034

• Dynamic Ratings

Description

Symbol

Conditions

Min.

Typ.

Max.

Unit

=34A

DS=10V

Forward Transconductance

gfs

17.5

Input Capacitance

iss

7000

14500

1300

135

DS=10V

GS=0V

Output Capacitance

oss

rss

f=1MHz

Reverse Transfer Capacitance

d(on)

Turn-On Time

Turn-Off Time

DD=400V, VGS=10V

=34A, R

=6.2Ω

d(off)

183

See Fig.3 and Fig.4

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

165

DD=400V, I

GS=10V

=68A

See Fig.5

Note *6 : Co(er) is a ﬁxed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% BVDSS.

Note *7 : C^o(tr)is a ﬁxed capacitance that gives the same charging times as Coss while VDS is rising from 0 to 80% BVDSS.

• Reverse Ratings

Description

Symbol

Conditions

Min.

Typ.

Max.

Unit

L=19.3mH, Tch=25°C

See Fig.1 and Fig.2

Avalanche Capability

IAV

13.5

=68A, VGS=0V

ch=25°C

Diode Forward On-Voltage

Reverse Recovery Time

Reverse Recovery Charge

1.0

600

8.7

1.35

=34A, VGS=0V

DD=300V

trr

μC

-di/dt=50A/μs

See Fig.6

Thermal Characteristics

Description

Symbol

Min.

Typ.

Max.

Unit

Channel to Case

th(ch-c)

th(ch-a)

0.23

°C/W

Channel to Ambient

123 4 5 6 7 8

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