生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G5 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.83 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 40 V |
配置: | COMMON EMITTER, 2 ELEMENTS | 最小直流电流增益 (hFE): | 250 |
JESD-30 代码: | R-PDSO-G5 | 元件数量: | 2 |
端子数量: | 5 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
VCEsat-Max: | 0.4 V | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FMW5T149 | ROHM | Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon |
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FMW6 | ROHM | High transition frequency (dual transistors) |
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FMW60N025S2HF | FUJI | TO-247-P2 |
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FMW60N027S2FDHF | FUJI | TO-247-P2 |
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FMW60N040S2HF | FUJI | TO-247-P2 |
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FMW60N043S2FDHF | FUJI | TO-247-P2 |
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