http://www.fujielectric.com/products/semiconductor/
FUJI POWER MOSFET
FMW60N025S2HF
Super J MOS® S2 series
Features
N-Channel enhancement mode power MOSFET
Equivalent circuit schematic
Pb-free lead terminal
RoHS compliant
uses Halogen-free molding compound
②Drain
Applications
For switching
①
Gate
①
②
③Source
③
Absolute Maximum Ratings at T =25°C (unless otherwise specified)
C
Parameter
Symbol
Characteristics
Unit
Remarks
V
V
DS
600
600
V
V
A
A
A
V
Drain-Source Voltage
DSX
VGS=-30V
95.5
60.4
286.5
±30
Tc=25°C Note*1
Tc=100°C Note*1
Note *1
Continuous Drain Current
ID
Pulsed Drain Current
Gate-Source Voltage
I
DP
GS
V
Non-Repetitive
Maximum Avalanche Current
I
AS
8.5
A
Note *2
Note *3
Non-Repetitive
Maximum Avalanche Energy
E
AS
6074
mJ
Maximum Drain-Source dV/dt
dVDS/dt
50
95.5
V/ns
A
VDS≤ 600V
Tc=25°C Note*1
Tc=100°C Note*1
Note *1
Continuous
Diode Forward Current
I
I
SD
60.4
A
Pulsed Diode Forward Current
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
SDP
286.5
15
A
dV/dt
-di/dt
V/ns
A/μs
Note *4
100
Note *5
2.50
T
a
=25°C
=25°C
Maximum Power Dissipation
P
D
W
575
T
C
T
T
ch
150
°C
°C
Operating and Storage Temperature range
stg
-55 to +150
Note *1 : Limited by maximum channel temperature.
Note *2 : Tch≤150°C, See Fig.1 and Fig.2
Note *3 : Starting Tch=25°C, IAS=5.1A, L=428mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
Note *4 : ISD≤95.5A, -di/dt≤100A/μs, VDS peak≤600V, Tch≤150°C.
Note *5 : ISD≤95.5A, dV/dt≤15V/ns, VDS peak≤600V, Tch≤150°C.
8688a
OCTOBER 2016
1