Datasheet > FMW57N60S1HF

FMW57N60S1HF

更新时间： 2024-04-09 18:59:19

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	1140K
描述
TO-247-P2

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数据手册

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FMW57N60S1HF 数据手册

FUJI POWER MOSFET

FMW57N60S1HF

http://www.fujielectric.com/products/semiconductor/

Typical Capacitance

C=f(VDS): VGS=0V, f=1MHz

Typical Coss stored energy

100000

10000

1000

100

Ciss

Coss

Crss

0.1

100

200

300

400

500

600

VDS [V]

Typical Switching Characteristics vs. ID Tch=25°C

t=f(ID): Vdd=400V, VGS=10V/0V, RG=9.1Ω

Typical Gate Charge Characteristics

VGS=f(QG): ID=57A, Tch=25°C

10000

1000

100

Vdd=480V

300V

120V

td(on)

td(off)

100

120

140

160

0.1

100

[nC]

ID [A]

Maximum Avalanche Energy vs. startingTch

E(AV)=f(starting Tch): Vcc=60V, I(AV)<=11.1A

Transient Thermal Impedance

Zth(ch-c)=f(t): D=0

4500

4000

3500

3000

2500

2000

1500

1000

500

I_AS=3.4A

-1

I_AS=6.7A

-2

I_AS=11.1A

-3

-6

-5

-4

-3

-2

-1

t [sec]

100

125

150

starting Tch [°C]

1 2 3 456 7 8

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