Datasheet > FMM5049VT

FMM5049VT

更新时间： 2024-11-11 03:59:07

品牌	Logo	应用领域
EUDYNA		放大器射频微波功率放大器高功率电源
页数	文件大小	规格书
4页	173K
描述
Power Amplifier MMIC

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中文翻译

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技术参数
数据手册

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FMM5049VT 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.17	Is Samacsys：	N
其他特性：	HIGH RELIABILITY	构造：	COMPONENT
增益：	30 dB	最大输入功率 (CW)：	12 dBm
最大工作频率：	2300 MHz	最小工作频率：	1800 MHz
最高工作温度：	85 °C	最低工作温度：	-40 °C
射频/微波设备类型：	NARROW BAND HIGH POWER	Base Number Matches：	1

FMM5049VT 数据手册

FMM5049VT

Power Amplifier MMIC

FEATURES

• High Output Power: P

= 41.0dBm (Typ.)

out

• High Linear Gain: GL = 33.0dB (Typ.)

• Broad Band: 1.8 to 2.3GHz

• Hermetically Sealed Package

DESCRIPTION

The FMM5049VT is a high-gain, wide band, three-stage MMIC

amplifier designed for PCS/PCN and W-CDMA applications as a driver

or output stage in the 1.8-2.3GHz band. The output stage is partially

matched for this device. This product is uniquely suited for use in

base station amplifiers as it offers high gain, long term reliability and

ease of use.

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Item

Symbol

Condition

Unit

Rating

Drain-Source Voltage

Gate-Source Voltage

Input Power

+12

-7

+15

dBm

°C

Storage Temperature

-55 to +125

stg

Operating Backside Temperature

-40 to +85

°C

Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:

1. The drain-source operating voltage (V ) should not exceed 10 volts.

2. The drain-source operating voltage (V

) should not exceed -5 volts.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Limits

Typ.

Item

Symbol

Conditions

Unit

Min.

Max.

out

Output Power

39.0 41.0

dBm

30.0 33.0

Linear Gain (Note 1)

1,2 = 10V

f = 2.2GHz

Pin = 12dBm

4000

Drain Current

Gate Current

Without RF

2500

DC Input Current

DD(DC)

Note 1 Pin≤-6dBm

Edition 1.0

October 2001

12 3 4

中文翻译

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