Datasheet > FMM5061VF

FMM5061VF

更新时间： 2024-11-10 21:54:43

品牌	Logo	应用领域
其他 - ETC		放大器射频微波功率放大器
页数	文件大小	规格书
15页	178K
描述
X-Band Power Amplifier MMIC

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FMM5061VF 数据手册

FMM5061VF

X-Band Power Amplifier MMIC

FEATURES

・High Output Power: Pout=33.0dBm (typ.)

・High Linear Gain: GL=27.0dB (typ.)

・Broad Band: 9.5~13.3GHz

・Impedance Matched Zin/Zout=50Ω

・Small Hermetic Metal-Ceramic Package(VF)

DESCRIPTION

The FMM5061VF is a MMIC amplifier that contains a three-stage

amplifier, internally matched, for standard communications band in the

9.5 to 13.3GHz frequency range.

Eudyna Devices’s stringent Quality Assurance Program assures the

highest reliability and consistent performance.

ABSOLUTE MAXIMUM RATING

Item

Drain-Source Voltage

Gate-Source Voltage

Input Power

Symbol

V_DD

V_GG

P_in

Condition

Unit

Rating

-7

dBm

^oC

Channel Temperature

Storage Temperature

T_ch

+175

-55~125

T_stg

^oC

RECOMMENDED OPERATING CONDITION

Item

Drain-Source Voltage

Gate-Source Voltage

Input Power

Symbol

Condition

Unit

Recommend

V_DD

V_GG

P_in

-5

dBm

^oC

≤

Operating Case Temperature

T_C

-40~+85

ELECTRICAL CHARACTERISTICS (Case Temperature T_{C =25 C)}

Unit

Limits

Min. Typ. Max.

Item

Symbol

Test Conditions

V_DD=6V

9.5

13.3

Frequency Range

GHz

dBm

V_GG=-5V

31^*133^*1

29^*231^*2

P_1dB

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Z_s=Z=50ohm

24^*126^*1

22^*224^*2

G_1dB

*1:f=9.5~11.7GHz

*2:f=11.7~13.3GHz

21^*1

15^*2

η_add

Power-added Efficiency at 1dB G.C.P.

∆

Third Order Intermodulation*

Drain Current at 1dB G.C.P.

IM₃

I_DD

*3: f=10MHz ,

-42^*3-45^*3

dBc

2-Tone Test,

1700 2400

P_out=19dBm S.C.L.

1500 2400

Gate Current

I_GG

-8

Input Return Loss (at Pin=-20dBm)

Output Return Loss (at Pin=-20dBm)

CASE STYLE: VF

RL_out

G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level

ESD

Class 0

~ 199 V

Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)

Edition 1.2

July 2004

12 3 4 5 6 7...15

中文翻译

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