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FMM200-0075P PDF预览

FMM200-0075P

更新时间: 2024-11-06 21:55:39
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关
页数 文件大小 规格书
2页 40K
描述
Trench Power MOSFET

FMM200-0075P 技术参数

是否无铅: 不含铅生命周期:Transferred
包装说明:IN-LINE, R-PSIP-T5针数:5
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.71Is Samacsys:N
其他特性:UL RECOGNIZED, HIGH RELIABILITY外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS最小漏源击穿电压:75 V
最大漏极电流 (ID):200 A最大漏源导通电阻:0.0045 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T5
JESD-609代码:e1元件数量:2
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FMM200-0075P 数据手册

 浏览型号FMM200-0075P的Datasheet PDF文件第2页 
Advanced Technical Information  
FMM 200-0075P  
ID25 = 200 A  
VDSS = 75 V  
RDSon = 3.5 m  
Trench Power MOSFET  
-Phaseleg Topology-  
in ISOPLUS i4-PACTM  
with DAB Base  
3
5
T1  
T2  
4
1
2
1
5
Features  
MOSFET T1/T2  
trench MOSFET  
- very low on state resistance RDSon  
Symbol  
VDSS  
Conditions  
Maximum Ratings  
- fast body diode  
TVJ = 25°C to TVJmax  
75  
V
V
• DABbasedISOPLUSi4-PACTM package  
- isolated back surface  
VGS  
±20  
- low coupling capacity between pins  
and heatsink  
ID25  
ID90  
TC = 25°C  
TC = 90°C  
200  
160  
A
A
- enlarged creepage towards heatsink  
- application friendly pinout  
- low inductive current path  
- extremely high reliability  
- light weight  
IF25  
IF90  
(diode) TC = 25°C  
(diode) TC = 90°C  
185  
125  
A
A
- industry standard outline  
- UL registered E 72873  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
Applications  
RDSon  
VGSth  
IDSS  
VGS = 10 V;ID = 100 A  
3.5  
4.5 mΩ  
• automobiles and industrial vehicles  
-ACdrives-startergeneratorfor42Vetc.  
- choppers - replacing series resistors  
for DC drives, heating etc.  
- DC-DC converters - between 12V  
and 42V system etc.  
- electronic switches -replacing relays  
and fuses  
• power supplies  
VDS = 20 V;ID = 1 mA;  
2
4
1
V
VDS = 75 V;VGS = 0 V; TVJ = 25°C  
TVJ = 125°C  
µA  
0.1  
mA  
IGSS  
VGS = ±20 V; VDS = 0 V  
200 nA  
Qg  
Qgs  
Qgd  
220  
50  
75  
nC  
nC  
nC  
VGS= 10 V; VDS = 60 V; ID = 25 A  
- DC-DC converters  
- solar inverters  
td(on)  
tr  
td(off)  
tf  
670  
1020  
1620  
1170  
ns  
ns  
ns  
ns  
- converters for fuel cells  
• battery supplied systems  
- choppers or inverters for drives in  
hand held tools  
VGS= 10 V; VDS = 30 V;  
ID = 25 A; RG = 10 Ω  
- battery chargers  
VF  
trr  
(diode) IF = 150 A;VGS = 0 V  
1.1  
1.6  
V
(diode) IF = 20 A; -di/dt = 100 A/µs; VDS = 30 V  
120  
ns  
RthJC  
RthJS  
0.55 K/W  
K/W  
tbd  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2003 IXYS All rights reserved  
1 - 2  
IXYS Semiconductor GmbH  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  

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