5秒后页面跳转
FM530-T PDF预览

FM530-T

更新时间: 2024-11-03 22:31:59
品牌 Logo 应用领域
美丽微 - FORMOSA 二极管
页数 文件大小 规格书
2页 84K
描述
Chip Schottky Barrier Diodes - Silicon epitaxial planer type

FM530-T 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
Is Samacsys:NBase Number Matches:1

FM530-T 数据手册

 浏览型号FM530-T的Datasheet PDF文件第2页 
Chip Schottky Barrier Diodes  
Formosa MS  
FM520-T THRU FM5100-T  
Silicon epitaxial planer type  
Features  
SMC-T  
Plastic package has Underwriters Laboratory  
FlammabilityClassification 94V-OUtilizing Flame  
Retardant EpoxyMolding Compound.  
0.276(7.0)  
0.260(6.6)  
0.012(0.3) Typ.  
0.152(3.8)  
0.189(4.8)  
0.173(4.4)  
For surface mounted applications.  
0.144(3.6)  
Exceeds environmental standards of MIL-S-19500 /  
228  
0.244(6.2)  
0.228(5.8)  
Low leakage current.  
0.087(2.2)  
0.071(1.8)  
0.032(0.8) Typ.  
0.040(1.0) Typ.  
0.040 (1.0) Typ.  
Dimensions in inches and (millimeters)  
Mechanical data  
Case : Molded plastic, JEDEC DO-214AB  
Terminals : Solder plated, solderable per MIL-STD-750,  
Method 2026  
Polarity : Indicated by cathode band  
Mounting Position : Any  
Weight : 0.00585 ounce, 0.195 gram  
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)  
PARAMETER  
CONDITIONS  
Symbol  
IO  
MIN.  
TYP.  
MAX.  
5.0  
UNIT  
A
Forward rectified current  
See Fig.1  
8.3ms single half sine-wave superimposed on  
rate load (JEDEC methode)  
Forward surge current  
IFSM  
150  
A
o
VR = VRRM TA = 25 C  
0.5  
50  
mA  
mA  
Reverse current  
IR  
o
VR = VRRM TA = 125 C  
o
Thermal resistance  
Junction to ambient  
RqJA  
CJ  
15  
C / w  
pF  
Diode junction capacitance  
Storage temperature  
f=1MHz and applied 4vDC reverse voltage  
380  
o
TSTG  
-55  
+150  
C
Operating  
*1  
*2  
*3  
*4  
VRRM  
VRMS  
VR  
VF  
MARKING  
temperature  
SYMBOLS  
CODE  
o
( C)  
(V)  
(V)  
(V)  
(V)  
FM520-T  
FM530-T  
FM540-T  
FM550-T  
FM560-T  
FM580-T  
FM5100-T  
SS52  
SS53  
SS54  
SS55  
SS56  
SS58  
S510  
20  
30  
40  
50  
60  
80  
14  
21  
28  
35  
42  
56  
70  
20  
30  
40  
50  
60  
80  
100  
0.55  
-55 to +125  
*1 Repetitive peak reverse voltage  
*2 RMS voltage  
0.70  
-55 to +150  
*3 Continuous reverse voltage  
*4 Maximum forward voltage  
0.85  
100  

与FM530-T相关器件

型号 品牌 获取价格 描述 数据表
FM530-T1 PACELEADER

获取价格

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
FM530-W RECTRON

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 30V V(RRM), Silicon, DO-214AB, ROHS COM
FM540 RECTRON

获取价格

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 5.0 Ampere
FM540 FRONTIER

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon, DO-214AB, SMC, 2 P
FM540 FORMOSA

获取价格

Chip Schottky Barrier Diodes - Silicon epitaxial planer type
FM540A RECTRON

获取价格

Reverse Voltage Vr : 40 V;Forward Current Io : 5.0 A;Max Surge Current : 140 A;Forward Vol
FM540B RECTRON

获取价格

Reverse Voltage Vr : 40 V;Forward Current Io : 5.0 A;Max Surge Current : 200 A;Forward Vol
FM540-B FORMOSA

获取价格

Chip Schottky Barrier Diodes - Silicon epitaxial planer type
FM540BV-T RECTRON

获取价格

Rectifier Diode,
FM540BV-W RECTRON

获取价格

Rectifier Diode,