Datasheet > FM550-B

FM550-B

更新时间： 2024-11-05 22:31:59

品牌	Logo	应用领域
美丽微 - FORMOSA		二极管
页数	文件大小	规格书
2页	83K
描述
Chip Schottky Barrier Diodes - Silicon epitaxial planer type

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中文翻译

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数据手册

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FM550-B 数据手册

Chip Schottky Barrier Diodes

Formosa MS

FM520-B THRU FM5100-B

Silicon epitaxial planer type

Features

SMB

Plastic package has Underwriters Laboratory

FlammabilityClassification 94V-O Utilizing Flame

RetardantEpoxy Molding Compound.

0.213(5.4)

0.197(5.0)

0.016(0.4) Typ.

For surface mounted applications.

0.142(3.6)

0.126(3.2)

Exceeds environmental standards of MIL-S-19500 /

228

0.173(4.4)

0.157(4.0)

Low leakage current.

0.075(1.9)

0.067(1.7)

0.040(1.0) Typ.

0.040 (1.0) Typ.

Mechanical data

Dimensions in inches and (millimeters)

Case : Molded plastic, JEDECDO-214AA

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity : Indicated by c athode band

Mounting Position : Any

Weight : 0.00878 ounce, 0.293 gram

MAXIMUM RATINGS (AT T_A=25 C unless otherwise noted)

PARAMETER

CONDITIONS

Symbol

I_O

MIN.

TYP.

MAX.

5.0

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

Forward surge current

150

I_FSM

V_R= V_RRMT_A= 25 C

0.5

Reverse current

I_R

V_R= V_RRMT_A= 125 C

Thermal resistance

Junction to lead

C / w

Rq_JL

C_J

Diode junction capacitance

Storage temperature

f=1MHz and applied 4vDC reverse voltage

380

-55

+150

T_STG

Operating

V_RRM

V_RMS

V_R

V_F

MARKING

temperature

SYMBOLS

CODE

( C)

(V)

FM520-B

FM530-B

FM540-B

FM550-B

FM560-B

FM580-B

FM5100-B

SS52

SS53

SS54

SS55

SS56

SS58

S510

100

0.55

-55 to +125

*1 Repetitive peak reverse voltage

*2 RMS voltage

0.70

-55 to +150

*3 Continuous reverse voltage

*4 Maximum forward voltage

0.85

100

中文翻译

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