5秒后页面跳转
FM25V02-DG PDF预览

FM25V02-DG

更新时间: 2024-02-14 19:11:27
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
18页 504K
描述
256Kb Serial 3V F-RAM Memory

FM25V02-DG 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:SOP, SOP8,.25
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.08
Is Samacsys:NJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
内存密度:262144 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:8混合内存类型:N/A
湿度敏感等级:1功能数量:1
端子数量:8字数:32768 words
字数代码:32000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:2.5/3.3 V
认证状态:Not Qualified座面最大高度:1.75 mm
最大待机电流:0.00015 A子类别:SRAMs
最大压摆率:0.0025 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:3.9 mmBase Number Matches:1

FM25V02-DG 数据手册

 浏览型号FM25V02-DG的Datasheet PDF文件第1页浏览型号FM25V02-DG的Datasheet PDF文件第2页浏览型号FM25V02-DG的Datasheet PDF文件第4页浏览型号FM25V02-DG的Datasheet PDF文件第5页浏览型号FM25V02-DG的Datasheet PDF文件第6页浏览型号FM25V02-DG的Datasheet PDF文件第7页 
FM25V02 - 256Kb SPI FRAM  
Protocol Overview  
Overview  
The SPI interface is a synchronous serial interface  
using clock and data pins. It is intended to support  
multiple devices on the bus. Each device is activated  
using a chip select. Once chip select is activated by  
the bus master, the FM25V02 will begin monitoring  
the clock and data lines. The relationship between the  
falling edge of /S, the clock and data is dictated by  
the SPI mode. The device will make a determination  
of the SPI mode on the falling edge of each chip  
select. While there are four such modes, the  
FM25V02 supports only modes 0 and 3. Figure 2  
shows the required signal relationships for modes 0  
and 3. For both modes, data is clocked into the  
FM25V02 on the rising edge of C and data is  
expected on the first rising edge after /S goes active.  
If the clock starts from a high state, it will fall prior to  
the first data transfer in order to create the first rising  
edge.  
The FM25V02 is a serial F-RAM memory. The  
memory array is logically organized as 32,768 x 8  
and is accessed using an industry standard Serial  
Peripheral Interface or SPI bus. Functional operation  
of the F-RAM is similar to Serial Flash. The major  
differences between the FM25V02 and a Serial Flash  
with the same pinout are the F-RAM‟s superior write  
performance, very high endurance, and lower power  
consumption.  
Memory Architecture  
When accessing the FM25V02, the user addresses  
32K locations of 8 data bits each. These data bits are  
shifted serially. The addresses are accessed using the  
SPI protocol, which includes a chip select (to permit  
multiple devices on the bus), an op-code, and a two-  
byte address. The complete address of 15-bits  
specifies each byte address uniquely.  
The SPI protocol is controlled by op-codes. These  
op-codes specify the commands to the device. After  
/S is activated the first byte transferred from the bus  
master is the op-code. Following the op-code, any  
addresses and data are then transferred.  
Most functions of the FM25V02 either are controlled  
by the SPI interface or are handled automatically by  
on-board circuitry. The access time for memory  
operation is essentially zero, beyond the time needed  
for the serial protocol. That is, the memory is read or  
written at the speed of the SPI bus. Unlike Serial  
Flash, it is not necessary to poll the device for a ready  
condition since writes occur at bus speed. So, by the  
time a new bus transaction can be shifted into the  
device, a write operation will be complete. This is  
explained in more detail in the interface section.  
Certain op-codes are commands with no subsequent  
data transfer. The /S must go inactive after an  
operation is complete and before a new op-code can  
be issued. There is one valid op-code only per active  
chip select.  
SPI Mode 0: CPOL=0, CPHA=0  
Users expect several obvious system benefits from  
the FM25V02 due to its fast write cycle and high  
endurance as compared to Serial Flash. In addition  
there are less obvious benefits as well. For example  
in a high noise environment, the fast-write operation  
is less susceptible to corruption than Serial Flash  
since it is completed quickly. By contrast, Serial  
Flash requiring milliseconds to write is vulnerable to  
noise during much of the cycle.  
S
C
D
7
6
5
4
3
2
1
0
MSB  
LSB  
Serial Peripheral Interface SPI Bus  
SPI Mode 3: CPOL=1, CPHA=1  
The FM25V02 employs a Serial Peripheral Interface  
(SPI) bus. It is specified to operate at speeds up to  
40MHz. This high-speed serial bus provides high  
S
performance serial communication to  
a
host  
C
microcontroller. Many common microcontrollers  
have hardware SPI ports allowing a direct interface.  
It is quite simple to emulate the port using ordinary  
port pins for microcontrollers that do not. The  
FM25V02 operates in SPI Mode 0 and 3.  
D
7
6
5
4
3
2
1
0
MSB  
LSB  
Figure 2. SPI Modes 0 & 3  
Page 3 of 18  
Document Number: 001-84494 Rev. **  

与FM25V02-DG相关器件

型号 品牌 描述 获取价格 数据表
FM25V02-DGTR CYPRESS 256Kb Serial 3V F-RAM Memory

获取价格

FM25V02-DGTR RAMTRON 256Kb Serial 3V F-RAM Memory

获取价格

FM25V02-G CYPRESS 256Kb Serial 3V F-RAM Memory

获取价格

FM25V02-G RAMTRON 256Kb Serial 3V F-RAM Memory

获取价格

FM25V02-GTR CYPRESS 256Kb Serial 3V F-RAM Memory

获取价格

FM25V02-GTR RAMTRON 256Kb Serial 3V F-RAM Memory

获取价格