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FM25V10-GTR PDF预览

FM25V10-GTR

更新时间： 2024-01-07 09:25:04
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
17页 484K
描述
1Mb Serial 3V F-RAM Memory

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中文翻译

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FM25V10-GTR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：PDIP-8Reach Compliance Code：unknown
风险等级：5.65JESD-30 代码：R-PDIP-T8
内存密度：1048576 bit内存宽度：8
功能数量：1端子数量：8
字数：131072 words字数代码：128000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：128KX8
封装主体材料：PLASTIC/EPOXY封装代码：DIP
封装形状：RECTANGULAR最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2 V表面贴装：NO
技术：CMOS温度等级：INDUSTRIAL
端子形式：THROUGH-HOLE端子位置：DUAL
Base Number Matches：1

FM25V10-GTR 数据手册

 浏览型号FM25V10-GTR的Datasheet PDF文件第2页浏览型号FM25V10-GTR的Datasheet PDF文件第3页浏览型号FM25V10-GTR的Datasheet PDF文件第4页浏览型号FM25V10-GTR的Datasheet PDF文件第5页浏览型号FM25V10-GTR的Datasheet PDF文件第6页浏览型号FM25V10-GTR的Datasheet PDF文件第7页 
FM25V10  
1Mb Serial 3V F-RAM Memory  
Features  
Device ID and Serial Number  
1M bit Ferroelectric Nonvolatile RAM  
Organized as 131,072 x 8 bits  
Device ID reads out Manufacturer ID & Part ID  
Unique Serial Number (FM25VN10)  
High Endurance 100 Trillion (1014) Read/Writes  
10 Year Data Retention  
Low Voltage, Low Power  
NoDelay™ Writes  
Low Voltage Operation 2.0V – 3.6V  
90 A Standby Current (typ.)  
5 A Sleep Mode Current (typ.)  
Advanced High-Reliability Ferroelectric Process  
Very Fast Serial Peripheral Interface - SPI  
Up to 40 MHz Frequency  
Industry Standard Configurations  
Industrial Temperature -40 C to +85 C  
8-pin “Green”/RoHS SOIC Package  
Direct Hardware Replacement for Serial Flash  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
Write Protection Scheme  
Hardware Protection  
Software Protection  
technology. The FM25VN10 is offered with a unique  
serial number that is read-only and can be used to  
identify a board or system. Both devices incorporate  
a read-only Device ID that allows the host to  
determine the manufacturer, product density, and  
product revision. The devices are guaranteed over an  
industrial temperature range of -40°C to +85°C.  
Description  
The FM25V10 is a 1-megabit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 10 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by Serial  
Flash and other nonvolatile memories.  
Pin Configuration  
Unlike Serial Flash, the FM25V10 performs write  
operations at bus speed. No write delays are incurred.  
Data is written to the memory array immediately  
after it has been transferred to the device. The next  
bus cycle may commence without the need for data  
polling. The product offers very high write  
endurance, orders of magnitude more endurance than  
Serial Flash. Also, F-RAM exhibits lower power  
consumption than Serial Flash.  
1
2
3
4
8
7
6
5
S
Q
VDD  
HOLD  
C
W
VSS  
D
Pin Name  
Function  
/S  
/W  
/HOLD  
C
D
Q
VDD  
VSS  
Chip Select  
Write Protect  
Hold  
Serial Clock  
Serial Data Input  
Serial Data Output  
Supply Voltage  
Ground  
These capabilities make the FM25V10 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes or low power operation. Examples  
range from data collection, where the number of  
write cycles may be critical, to demanding industrial  
controls where the long write time of Serial Flash can  
cause data loss.  
The FM25V10 provides substantial benefits to users  
of Serial Flash as a hardware drop-in replacement.  
The devices use the high-speed SPI bus, which  
enhances the high-speed write capability of F-RAM  
This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s  
internal qualification testing and has reached production status.  
Cypress Semiconductor Corporation  
Document Number: 001-84499 Rev. **  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised February 25, 2013  
1234567...17

中文翻译

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FM25V10-GTR 替代型号

型号 品牌 替代类型 描述 数据表
FM25V10-G CYPRESS

完全替代

 1Mb Serial 3V F-RAM Memory

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FM25V20A-DGQ INFINEON

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FM25V20A-DGQTR INFINEON

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 		2Mb 3.3V Industrial(Q) 33MHz SPI F-RAM in 8-lead DFN
FM25V20A-DGTR CYPRESS

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 		2-Mbit (256 K × 8) Serial (SPI) F-RAM
FM25V20A-DGTR INFINEON

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