FM25V20A
2-Mbit (256 K × 8) Serial (SPI) F-RAM with
Extended Temperature
FM25V20A, 2-Mbit (256
K X 8) Serial (SPI) F-RAM with Extended Temperature
Features
Functional Description
■ 2-Mbit ferroelectric random access memory (F-RAM) logically
organized as 256 K × 8
❐ High-endurance 10 trillion (1014) read/writes
❐ 121-year data retention (See the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
The FM25V20A is a 2-Mbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 121 years
while eliminating the complexities, overhead, and system level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
Unlike serial flash and EEPROM, the FM25V20A performs write
operations at bus speed. No write delays are incurred. Data is
written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The FM25V20A is capable of supporting
1014 read/write cycles, or 10 million times more write cycles than
EEPROM.
■ Very fast SPI
❐ Up to 33 MHz frequency
❐ Direct hardware replacement for serial flash and EEPROM
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■ Sophisticated write protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array
These capabilities make the FM25V20A ideal for nonvolatile
memory applications requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
■ Device ID
❐ Manufacturer ID and Product ID
■ Low power consumption
❐ 3.0 mA active current at 33 MHz
❐ 400 µA standby current
The FM25V20A provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
FM25V20A uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
extended temperature range of –40 C to +105 C.
❐ 12 µA sleep mode current
■ Low-voltage operation: VDD = 2.0 V to 3.6 V
■ Extended temperature: –40 C to +105 C
■ 8-pin thin dual flat no leads (DFN) package
■ Restriction of hazardous substances (RoHS) compliant
For a complete list of related resources, click here.
Logic Block Diagram
WP
Instruction Decoder
Clock Generator
CS
Control Logic
Write Protect
SCK
256 K x 8
FRAM Array
Instruction Register
18
8
Address Register
Counter
SI
SO
Data I/O Register
3
Nonvolatile Status
Register
Cypress Semiconductor Corporation
Document Number: 001-92478 Rev. *F
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised August 28, 2019