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FM25V20A-DGQ PDF预览

FM25V20A-DGQ

更新时间: 2024-09-24 15:19:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
20页 618K
描述
2Mb 3.3V Industrial(Q) 33MHz SPI F-RAM in 8-lead DFN

FM25V20A-DGQ 数据手册

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FM25V20A  
2-Mbit (256 K × 8) Serial (SPI) F-RAM with  
Extended Temperature  
FM25V20A, 2-Mbit (256  
K X 8) Serial (SPI) F-RAM with Extended Temperature  
Features  
Functional Description  
2-Mbit ferroelectric random access memory (F-RAM) logically  
organized as 256 K × 8  
High-endurance 10 trillion (1014) read/writes  
121-year data retention (See the Data Retention and  
Endurance table)  
NoDelay™ writes  
Advanced high-reliability ferroelectric process  
The FM25V20A is a 2-Mbit nonvolatile memory employing an  
advanced ferroelectric process. A ferroelectric random access  
memory or F-RAM is nonvolatile and performs reads and writes  
similar to a RAM. It provides reliable data retention for 121 years  
while eliminating the complexities, overhead, and system level  
reliability problems caused by serial flash, EEPROM, and other  
nonvolatile memories.  
Unlike serial flash and EEPROM, the FM25V20A performs write  
operations at bus speed. No write delays are incurred. Data is  
written to the memory array immediately after each byte is  
successfully transferred to the device. The next bus cycle can  
commence without the need for data polling. In addition, the  
product offers substantial write endurance compared with other  
nonvolatile memories. The FM25V20A is capable of supporting  
1014 read/write cycles, or 10 million times more write cycles than  
EEPROM.  
Very fast SPI  
Up to 33 MHz frequency  
Direct hardware replacement for serial flash and EEPROM  
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)  
Sophisticated write protection scheme  
Hardware protection using the Write Protect (WP) pin  
Software protection using Write Disable instruction  
Software block protection for 1/4, 1/2, or entire array  
These capabilities make the FM25V20A ideal for nonvolatile  
memory applications requiring frequent or rapid writes.  
Examples range from data collection, where the number of write  
cycles may be critical, to demanding industrial controls where the  
long write time of serial flash or EEPROM can cause data loss.  
Device ID  
Manufacturer ID and Product ID  
Low power consumption  
3.0 mA active current at 33 MHz  
400 µA standby current  
The FM25V20A provides substantial benefits to users of serial  
EEPROM or flash as a hardware drop-in replacement. The  
FM25V20A uses the high-speed SPI bus, which enhances the  
high-speed write capability of F-RAM technology. The device  
incorporates a read-only Device ID that allows the host to  
determine the manufacturer, product density, and product  
revision. The device specifications are guaranteed over an  
extended temperature range of –40 C to +105 C.  
12 µA sleep mode current  
Low-voltage operation: VDD = 2.0 V to 3.6 V  
Extended temperature: –40 C to +105 C  
8-pin thin dual flat no leads (DFN) package  
Restriction of hazardous substances (RoHS) compliant  
For a complete list of related resources, click here.  
Logic Block Diagram  
WP  
Instruction Decoder  
Clock Generator  
CS  
Control Logic  
Write Protect  
SCK  
256 K x 8  
FRAM Array  
Instruction Register  
18  
8
Address Register  
Counter  
SI  
SO  
Data I/O Register  
3
Nonvolatile Status  
Register  
Cypress Semiconductor Corporation  
Document Number: 001-92478 Rev. *F  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised August 28, 2019  

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