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FM25V20-G PDF预览

FM25V20-G

更新时间: 2022-03-30 20:30:31
品牌 Logo 应用领域
铁电 - RAMTRON 存储
页数 文件大小 规格书
17页 531K
描述
2Mb Serial 3V F-RAM Memory

FM25V20-G 数据手册

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FM25V20  
2Mb Serial 3V F-RAM Memory  
Features  
Device ID  
2M bit Ferroelectric Nonvolatile RAM  
Device ID reads out Manufacturer ID & Part ID  
Organized as 256K x 8 bits  
High Endurance 100 Trillion (1014) Read/Writes  
10 Year Data Retention  
Low Voltage, Low Power  
Low Voltage Operation 2.0V 3.6V  
100 A Standby Current (typ.)  
3 A Sleep Mode Current (typ.)  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
Very Fast Serial Peripheral Interface - SPI  
Industry Standard Configurations  
Up to 40 MHz Frequency  
Direct Hardware Replacement for Serial Flash  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
Industrial Temperature -40C to +85C  
8-pin “Green”/RoHS EIAJ SOIC Package  
8-pin “Green”/RoHS TDFN Package  
8-pin “Green”/POHS PDIP Package  
Write Protection Scheme  
Hardware Protection  
Software Protection  
Device ID that allows the host to determine the  
manufacturer, product density, and product revision.  
The device is guaranteed over an industrial  
temperature range of -40°C to +85°C.  
Description  
The FM25V20 is a 2-megabit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 10 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by Serial  
Flash and other nonvolatile memories.  
Pin Configuration  
Top View  
/S  
Q
VDD  
/HOLD  
C
1
2
3
4
8
7
6
5
Unlike Serial Flash, the FM25V20 performs write  
operations at bus speed. No write delays are incurred.  
Data is written to the memory array immediately  
after it has been transferred to the device. The next  
bus cycle may commence without the need for data  
polling. The product offers very high write  
endurance, orders of magnitude more endurance than  
Serial Flash. Also, F-RAM exhibits lower power  
consumption than Serial Flash.  
/W  
VSS  
D
1
8
7
6
5
S
Q
VDD  
HOLD  
C
2
3
4
W
VSS  
D
These capabilities make the FM25V20 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes or low power operation. Examples  
range from data collection, where the number of  
write cycles may be critical, to demanding controls  
where the long write time of Serial Flash can cause  
data loss.  
Pin Name  
/S  
/W  
/HOLD  
C
D
Q
VDD  
VSS  
Function  
Chip Select  
Write Protect  
Hold  
Serial Clock  
Serial Data Input  
Serial Data Output  
Supply Voltage  
Ground  
The FM25V20 provides substantial benefits to users  
of Serial Flash as a hardware drop-in replacement.  
The device uses the high-speed SPI bus, which  
enhances the high-speed write capability of F-RAM  
technology. The device incorporates a read-only  
This product conforms to specifications per the terms of the Ramtron  
standard warranty. The product has completed Ramtron’s internal  
qualification testing and has reached production status.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
http://www.ramtron.com  
Rev. 3.0  
August 2012  
Page 1 of 17  

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