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FM24C04B-GTR PDF预览

FM24C04B-GTR

更新时间： 2024-02-04 05:08:05
品牌 Logo 应用领域
铁电 - RAMTRON 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
12页 286K
描述
4Kb Serial 5V F-RAM Memory

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中文翻译

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FM24C04B-GTR 技术参数

是否Rohs认证： 符合生命周期：Contact Manufacturer
包装说明：, WAFERReach Compliance Code：unknown
风险等级：5.8数据保留时间-最小值：100
耐久性：1000000 Write/Erase CyclesI2C控制字节：1010DDMR
内存密度：4096 bit内存集成电路类型：EEPROM
内存宽度：8字数：512 words
字数代码：512最高工作温度：85 °C
最低工作温度：-40 °C组织：512X8
封装等效代码：WAFER并行/串行：SERIAL
电源：2.5/5 V认证状态：Not Qualified
串行总线类型：I2C最大待机电流：0.000001 A
子类别：EEPROMs最大压摆率：0.003 mA
技术：CMOS温度等级：INDUSTRIAL
写保护：HARDWAREBase Number Matches：1

FM24C04B-GTR 数据手册

 浏览型号FM24C04B-GTR的Datasheet PDF文件第2页浏览型号FM24C04B-GTR的Datasheet PDF文件第3页浏览型号FM24C04B-GTR的Datasheet PDF文件第4页浏览型号FM24C04B-GTR的Datasheet PDF文件第5页浏览型号FM24C04B-GTR的Datasheet PDF文件第6页浏览型号FM24C04B-GTR的Datasheet PDF文件第7页 
Preliminary  
FM24C04B  
4Kb Serial 5V F-RAM Memory  
Features  
4K bit Ferroelectric Nonvolatile RAM  
Low Power Operation  
•
•
•
5V operation  
•
•
•
•
•
Organized as 512 x 8 bits  
100 µA Active Current (100 kHz)  
4 µA (typ.) Standby Current  
High Endurance 1012 Read/Writes  
38 Year Data Retention  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
Industry Standard Configuration  
•
•
Industrial Temperature -40° C to +85° C  
8-pin “Green”/RoHS SOIC (-G)  
Fast Two-wire Serial Interface  
•
•
•
Up to 1 MHz maximum bus frequency  
Direct hardware replacement for EEPROM  
Supports legacy timing for 100 kHz & 400 kHz  
Description  
Pin Configuration  
The FM24C04B is a 4-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or FRAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 38 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by EEPROM  
and other nonvolatile memories.  
1
8
7
6
5
NC  
A1  
A2  
VSS  
VDD  
WP  
SCL  
SDA  
2
3
4
The FM24C04B performs write operations at bus  
speed. No write delays are incurred. Data is written to  
the memory array in the cycle after it has been  
successfully transferred to the device. The next bus  
cycle may commence immediately without the need  
for data polling. The FM24C04B is capable of  
supporting 1012 read/write cycles, or a million times  
more write cycles than EEPROM.  
Pin Names  
A1-A2  
SDA  
Function  
Device Select Address 1 and 2  
Serial Data/Address  
Serial Clock  
SCL  
WP  
Write Protect  
These capabilities make the FM24C04B ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss. The  
combination of features allows more frequent data  
writing with less overhead for the system.  
VSS  
Ground  
VDD  
Supply Voltage  
Ordering Information  
FM24C04B-G  
“Green”/RoHS 8-pin SOIC  
“Green”/RoHS 8-pin SOIC,  
Tape & Reel  
FM24C04B-GTR  
The FM24C04B provides substantial benefits to users  
of serial EEPROM, yet these benefits are available in  
a hardware drop-in replacement. The FM24C04B is  
available in an industry standard 8-pin SOIC package  
and uses  
a
familiar two-wire protocol. The  
specifications are guaranteed over the industrial  
temperature range from -40°C to +85°C.  
This is a product that has fixed target specifications but are subject  
to change pending characterization results.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
www.ramtron.com  
Rev. 1.3  
Feb. 2011  
Page 1 of 12  
1234567...12

中文翻译

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