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FM21L16-60-TGTR PDF预览

FM21L16-60-TGTR

更新时间： 2024-01-01 15:12:24
品牌 Logo 应用领域
铁电 - RAMTRON 存储
页数 文件大小 规格书
14页 225K
描述
Memory Circuit, 128KX16, CMOS, PDSO44, 0.400 INCH, GREEN, MS-024GAC, TSOP2-44

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中文翻译

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FM21L16-60-TGTR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TSSOP2包装说明：TSOP2, TSOP44,.46,32
针数：44Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.71
风险等级：5.64最长访问时间：110 ns
JESD-30 代码：R-PDSO-G44JESD-609代码：e4
长度：18.41 mm内存密度：2097152 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：16
混合内存类型：N/A湿度敏感等级：3
功能数量：1端子数量：44
字数：131072 words字数代码：128000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：128KX16
封装主体材料：PLASTIC/EPOXY封装代码：TSOP2
封装等效代码：TSOP44,.46,32封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE峰值回流温度（摄氏度）：260
电源：3/3.3 V认证状态：Not Qualified
座面最大高度：1.2 mm最大待机电流：0.00027 A
子类别：SRAMs最大压摆率：0.012 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：0.8 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30宽度：10.16 mm
Base Number Matches：1

FM21L16-60-TGTR 数据手册

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Preliminary  
FM21L16  
2Mbit FRAM Memory  
Features  
Superior to Battery-backed SRAM Modules  
2Mbit Ferroelectric Nonvolatile RAM  
•
•
•
•
No Battery Concerns  
Monolithic Reliability  
True Surface Mount Solution, No Rework Steps  
Superior for Moisture, Shock, and Vibration  
•
•
•
•
•
•
Organized as 128Kx16  
Configurable as 256Kx8 Using /UB, /LB  
1014 Read/Write Cycles  
NoDelay™ Writes  
Page Mode Operation to 40MHz  
Advanced High-Reliability Ferroelectric Process  
Low Power Operation  
•
•
•
2.7V – 3.6V Power Supply  
Low Current Mode (5µA) using ZZ pin  
18 mA Active Current  
SRAM Compatible  
•
•
Industry Std. 128Kx16 SRAM Pinout  
60 ns Access Time, 110 ns Cycle Time  
Industry Standard Configuration  
•
•
Industrial Temperature -40° C to +85° C  
44-pin “Green”/RoHS TSOP-II package  
Advanced Features  
•
Low VDD Monitor Protects Memory against  
Inadvertent Writes  
•
Software Programmable Block Write Protect  
array is divided into 8 uniform blocks, each of which  
can be individually write protected.  
Description  
The FM21L16 is a 128Kx16 nonvolatile memory that  
reads and writes like  
a standard SRAM. A  
The device is available in a 400 mil 44-pin TSOP-II  
surface mount package. Device specifications are  
guaranteed over industrial temperature range –40°C  
to +85°C.  
ferroelectric random access memory or FRAM is  
nonvolatile, which means that data is retained after  
power is removed. It provides data retention for over  
10 years while eliminating the reliability concerns,  
functional disadvantages, and system design  
complexities of battery-backed SRAM (BBSRAM).  
Fast write timing and high write endurance make  
FRAM superior to other types of memory.  
Pin Configuration  
In-system operation of the FM21L16 is very similar  
to other RAM devices and can be used as a drop-in  
replacement for standard SRAM. Read and write  
cycles may be triggered by /CE or simply by  
changing the address. The FRAM memory is  
nonvolatile due to its unique ferroelectric memory  
process. These features make the FM21L16 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes in the form of an SRAM.  
The FM21L16 includes a low voltage monitor that  
blocks access to the memory array when VDD drops  
below a critical threshold. The memory is protected  
against an inadvertent access and data corruption  
under this condition. The device also features  
software-controlled write protection. The memory  
Ordering Information  
FM21L16-60-TG  
60 ns access, 44-pin  
“Green”/RoHS TSOP-II  
This is a product that has fixed target specifications but are subject  
to change pending characterization results.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
http://www.ramtron.com  
Rev. 1.0  
Sept. 2007  
Page 1 of 14  
1234567...14

中文翻译

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