Preliminary
FM21LD16
2Mbit F-RAM Memory
Features
Superior to Battery-backed SRAM Modules
2Mbit Ferroelectric Nonvolatile RAM
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No Battery Concerns
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Organized as 128Kx16
Monolithic Reliability
Configurable as 256Kx8 Using /UB, /LB
True Surface Mount Solution, No Rework Steps
Superior for Moisture, Shock, and Vibration
1014 Read/Write Cycles
NoDelay™ Writes
Page Mode Operation to 33MHz
Advanced High-Reliability Ferroelectric Process
Low Power Operation
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2.7V – 3.6V Power Supply
Low Standby Current (90µA typ.)
Low Active Current (8 mA typ.)
SRAM Compatible
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JEDEC 128Kx16 SRAM Pinout
60 ns Access Time, 110 ns Cycle Time
Industry Standard Configuration
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Industrial Temperature -40° C to +85° C
48-ball “Green”/RoHS FBGA package
Pin compatible with FM22LD16 (4Mb) and
FM23MLD16 (8Mb)
Advanced Features
Software Programmable Block Write Protect
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The device is available in a 48-ball FBGA package.
Device specifications are guaranteed over industrial
temperature range –40°C to +85°C.
Description
The FM21LD16 is a 128Kx16 nonvolatile memory
that reads and writes like a standard SRAM. A
ferroelectric random access memory or F-RAM is
nonvolatile, which means that data is retained after
power is removed. It provides data retention for over
10 years while eliminating the reliability concerns,
functional disadvantages, and system design
complexities of battery-backed SRAM (BBSRAM).
Fast write timing and high write endurance make the
F-RAM superior to other types of memory.
Pin Configuration
1
2
3
4
5
6
A
B
C
/LB
/OE
/UB
A0
A3
A5
A1
A4
A6
A2
/CE
DQ1
NC
DQ8
DQ9
DQ0
DQ2
DQ10
In-system operation of the FM21LD16 is very similar
to other RAM devices and can be used as a drop-in
replacement for standard SRAM. Read and write
cycles may be triggered by /CE or simply by
changing the address. The F-RAM memory is
nonvolatile due to its unique ferroelectric memory
process. These features make the FM21LD16 ideal
for nonvolatile memory applications requiring
frequent or rapid writes in the form of an SRAM.
D
E
F
VSS
VDD
DQ11
DQ12
NC
NC
A7
DQ3
DQ4
DQ5
VDD
VSS
DQ6
A16
A15
DQ14 DQ13
A14
G
H
DQ15
NC
NC
A8
A12
A9
A13
A10
/WE
A11
DQ7
NC
The FM21LD16 includes a low voltage monitor that
blocks access to the memory array when VDD drops
below VDD min. The memory is protected against an
inadvertent access and data corruption under this
condition. The device also features software-
controlled write protection. The memory array is
divided into 8 uniform blocks, each of which can be
individually write protected.
Top View (Ball Down)
Ordering Information
FM21LD16-60-BG
60 ns access, 48-ball
“Green”/RoHS FBGA
FM21LD16-60-BGTR 60 ns access, 48-ball
“Green”/RoHS FBGA,
Tape & Reel
This is a product that has fixed target specifications but are
subject to change pending characterization results.
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 1.1
Apr. 2011
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