Datasheet > FGB20N60SF

FGB20N60SF

更新时间： 2024-11-09 11:11:23

品牌	Logo	应用领域
安森美 - ONSEMI		PC 栅瞄准线双极性晶体管功率控制
页数	文件大小	规格书
9页	688K
描述
600 V、20 A、2.2 V、TO-247高速场截止 IGBT

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技术参数
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FGB20N60SF 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
风险等级：	5.21	Samacsys Confidence：	3
Samacsys Status：	Released	Samacsys PartID：	167300
Samacsys Pin Count：	4	Samacsys Part Category：	Integrated Circuit
Samacsys Package Category：	TO-XXX (Inc. DPAK)	Samacsys Footprint Name：	TO263(DDPAK)
Samacsys Released Date：	2015-04-13 16:43:42	Is Samacsys：	N
其他特性：	LOW CONDUCTION LOSS	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	40 A	集电极-发射极最大电压：	600 V
配置：	SINGLE	最大降落时间（tf）：	48 ns
门极发射器阈值电压最大值：	6.5 V	门极-发射极最大电压：	20 V
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	208 W	认证状态：	Not Qualified
子类别：	Insulated Gate BIP Transistors	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	POWER CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	123 ns	标称接通时间 (ton)：	28 ns
Base Number Matches：	1

FGB20N60SF 数据手册

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与FGB20N60SF相关器件

型号	品牌	获取价格	描述	数据表
FGB20N60SFD	FAIRCHILD	获取价格	600V, 20A Field Stop IGBT
FGB20N60SFD	ONSEMI	获取价格	IGBT，600V，20A，场截止
FGB20N60SFD-F085	ONSEMI	获取价格	IGBT，600V，20A，2.2V，D2PAK 场截止
FGB20N6S2	FAIRCHILD	获取价格	600V, SMPS II Series N-Channel IGBT
FGB20N6S2D	FAIRCHILD	获取价格	600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGB20N6S2DT	FAIRCHILD	获取价格	600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGB20N6S2T	FAIRCHILD	获取价格	暂无描述
FGB2EJ104C++2CL5	AISHI	获取价格	Film DC
FGB2EJ105E++2EL5	AISHI	获取价格	Film DC
FGB2EJ106G++2GL5	AISHI	获取价格	Film DC

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