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FFPF10UP20STU PDF预览

FFPF10UP20STU

更新时间: 2024-09-18 11:14:07
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
5页 185K
描述
10A,200V,超快二极管

FFPF10UP20STU 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PSFM-T2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.24其他特性:FREE WHEELING DIODE
应用:ULTRA FAST SOFT RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.032 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

FFPF10UP20STU 数据手册

 浏览型号FFPF10UP20STU的Datasheet PDF文件第2页浏览型号FFPF10UP20STU的Datasheet PDF文件第3页浏览型号FFPF10UP20STU的Datasheet PDF文件第4页浏览型号FFPF10UP20STU的Datasheet PDF文件第5页 
FFPF10UP20S  
10 A, 200 V, Ultrafast Diode  
Description  
The FFPF10UP20S is an ultrafast diode with low forward voltage  
drop and rugged UIS capability. This device is intended for use as  
freewheeling and clamping diodes in a variety of switching power  
supplies and other power switching applications. It is specially suited  
for use in switching power supplies and industrial applications as  
welder and UPS application.  
www.onsemi.com  
Features  
Ultrafast Recovery t = 35 ns (@ I = 1 A)  
rr  
F
1
2
Max Forward Voltage, V = 1.15 V (@ T = 25°C)  
F
C
1. Cathode  
2. Anode  
Reverse Voltage, V  
= 200 V  
Avalanche Energy Rated  
RRM  
This Device is PbFree and is RoHS Compliant  
Applications  
Power Switching Circuits, SMPS  
Output Rectifiers  
Freewheeling Diodes  
1
2
ABSOLUTE MAXIMUM RATINGS  
C
TO220, 2Lead  
CASE 221AS  
T
= 25°C unless otherwise noted  
Symbol  
Parameter  
Rating  
Unit  
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
200  
V
RRM  
RWM  
F(AV)  
MARKING DIAGRAM  
V
200  
10  
V
A
Average Rectified Forward Current  
@ TC = 25°C  
I
I
Nonrepetitive Peak Surge Current  
60 Hz Single HalfSine Wave  
100  
A
FSM  
°C  
T , T  
STG  
Operating Junction and Storage  
Temperature  
65 to  
+175  
J
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
$Y&Z&3&K  
F10UP20S  
$Y  
&Z&3  
&K  
= ON Semiconductor Logo  
= Data Code (Year & Week)  
= Lot  
F10UP20S  
= Specific Device Code  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
March, 2019 Rev. 4  
FFPF10UP20S/D  

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