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FFB3904_1 PDF预览

FFB3904_1

更新时间: 2024-11-30 03:36:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
7页 99K
描述
NPN Multi-Chip General Purpose Amplifier

FFB3904_1 数据手册

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FMB3904  
FFB3904  
MMPQ3904  
E2  
B4  
C2  
E4  
B3  
B2  
E1  
E3  
C1  
B2  
E2  
C1  
B1  
E1  
C4  
C4  
C3  
C2  
B2  
SC70-6  
Mark: .1A  
B1  
E2  
C3  
C2  
pin #1  
E1  
B1  
pin #1  
C2  
C1  
NOTE: The pinouts are symmetrical; pin 1 and pin  
4 are interchangeable. Units inside the carrier can  
be of either orientation and will not affect the  
functionality of the device.  
C1  
pin #1  
SOIC-16  
Mark: MMPQ3904  
SuperSOT -6  
Mark: .1A  
Dot denotes pin #1  
NPN Multi-Chip General Purpose Amplifier  
This device is designed as a general purpose amplifier and switch.  
The useful dynamic range extends to 100 mA as a switch and to  
100 MHz as an amplifier. Sourced from Process 23.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
40  
60  
V
V
4
6.0  
V
Collector Current - Continuous  
200  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
FFB3904  
FMB3904  
MMPQ3904  
PD  
RθJA  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Effective 4 Die  
300  
2.4  
415  
700  
5.6  
180  
1,000  
8.0  
mW  
mW/°C  
°C/W  
°C/W  
°C/W  
125  
240  
Each Die  
1998 Fairchild Semiconductor Corporation  

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