Datasheet > FFB3946DW1T1G

FFB3946DW1T1G

更新时间： 2024-12-02 02:51:51

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
12页	234K
描述
Dual General Purpose Transistors

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FFB3946DW1T1G 数据手册

SEMICONDUCTOR

FFB3946D

TECHNICAL DATA

Dual General Purpose

Transistors

The FFB3946D device is a spin–off of our popular

SOT–23/SOT–323 three–leaded device. It is designed for general

purpose amplifier applications and is housed in the SOT–363

six–leaded surface mount package. By putting two discrete devices in

one package, this device is ideal for low–power surface mount

applications where board space is at a premium.

•h_FE, 100–300

• Low V_CE(sat), < 0.4 V

• Simplifies Circuit Design

SOT 363/SC-88

• Reduces Board Space

• Reduces Component Count

•Available in 8 mm, 7–inch/3,000 Unit Tape and Reel

We declare that the material of product

compliance with RoHS requirements.

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

(NPN)

Symbol

V _CEO

Value

Unit

Vdc

Q₁

Q₂

(PNP)

-40

Collector-Base Voltage

(NPN)

V_CBO

V _EBO

I _C

Vdc

mAdc

*Q1 PNP

Q2 NPN

(PNP)

-40

Emitter-Base Voltage

(NPN)

6.0

(PNP)

-5.0

ORDERING INFORMATION

CollectorCurrent-Continuous

(NPN)

Device

Marking

Shipping

FFB3946DW1T1G

FFB3946DW1T3G

3000Units/Reel

10000Units/Reel

200

(PNP)

-200

Electrostatic Discharge

E_SDHBM>16000,

MM>2000

THERMAL CHARACTERISTICS

Characteristic

Total Package Dissipation ⁽¹⁾

Symbol

Max

150

Unit

P_D

T_A= 25°C

Thermal Resistance Junction

to Ambient

R_θJA

833

°C/W

Junction and Storage

Temperature Range

T_J,T_stg–55 to +150 °C

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

recommended footprint.

2008. 03. 10

Revision No : 0

1/12

12 3 4 5 6 7...12

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