Datasheet > FESB16ET

FESB16ET

更新时间： 2024-11-06 02:48:43

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	382K
描述
16.0 Amperes Surface Mount Type Positive Ultra Fast Recovery Rectifier Diode

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中文翻译

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数据手册

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FESB16ET 数据手册

FESB16AT thru FESB16NT

Pb Free Plating Product

FESB16AT thru FESB16NT

16.0 Amperes Surface Mount Type Positive Ultra Fast Recovery Rectifier Diode

TO-263AB/D2PAK

Unit:inch(mm)

Features

※ ThinkiSemi latest&matured process FRD/FRED

※ Low forward voltage drop

※ High current capability

※ Low reverse leakage current

※ High surge current capability

Application

※ Automotive Inverters and Solar Inverters

※ Car Audio Amplifiers and Sound Device Systems

※ Plating Power Supply,Motor Control,UPS and SMPS etc.

Mechanical Data

※

Case:Surface Mount TO-263AB/D2PAK package

※ Epoxy: UL 94V-0 rate flame retardant

※ Terminals: Solderable per MIL-STD-202 method 208

※ Polarity: As marked on diode body

※ Mounting position: Any

Internal Configuration

Base Backside

Negative

Suffix "TR"

※ Weight: 2.0 gram approximately

Positive

Suffix "T"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase,half wave,60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

FESB16AT

FESB16BT

FESB16CT

FESB16DT

FESB16ET

FESB16FT

FESB16GT

FESB16HT

FESB16IT

FESB16JT

FESB16KT

FESB16LT

PARAMETER

SYMBOL

FESB16MT

FESB16NT

UNIT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

1200

840

Maximum DC Blocking Voltage

1000

1200

Maximum Average Forward Rectified

Current TC=125℃

16.0

300

IF(AV)

IFSM

(Total Device 16.0A)

Peak Forward Surge Current, 8.3ms single Half

sine-wave superimposed on rated load (JEDEC

method)(Per Diode/Per Leg)

Maximum Instantaneous Forward Voltage

@16.0A(Per Diode/Per Leg)

(Typical)

1.50-1.70

0.85-0.95

1.00-1.25

1.25-1.50

Maximum DC Reverse Current @TJ=25℃

At Rated DC Blocking Voltage @TJ=125℃

1.0

100

μA

Maximum Reverse Recovery Time (Note1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

25-50

50-75

Trr

160

1.5

RθJC

℃/W

Operating Junction and Storage

Temperature Range

-55 to +175

TJ,TSTG

℃

Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.

Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

Note:(3)Thermal Resistance junction to case.

Page 1/2

Rev.10T

http://www.thinkisemi.com.tw/

中文翻译

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与FESB16ET相关器件

型号	品牌	获取价格	描述	数据表
FESB16ETR	THINKISEMI	获取价格	16.0 Ampere Surface Mount Type Negative Ultra Fast Recovery Rectifier Diode
FESB16FT	VISHAY	获取价格	FAST EFFICIENT PLASTIC RECTIFIER
FESB16FT	THINKISEMI	获取价格	16.0 Amperes Surface Mount Type Positive Ultra Fast Recovery Rectifier Diode
FESB16FT/45	VISHAY	获取价格	Rectifier Diode, 1 Element, 16A, 300V V(RRM)
FESB16FT-45	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 16A, 300V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-
FESB16FT-81	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 16A, 300V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-
FESB16FT-E3/45	VISHAY	获取价格	DIODE GEN PURP 300V 16A TO263AB
FESB16FT-E3/81	VISHAY	获取价格	DIODE 16 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3,
FESB16FTHE3/45	VISHAY	获取价格	DIODE GEN PURP 300V 16A TO263AB
FESB16FT-HE3/45	VISHAY	获取价格	DIODE 16 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3,

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