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FESB16FTHE3/81 PDF预览

FESB16FTHE3/81

更新时间: 2024-11-05 22:58:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 134K
描述
DIODE GEN PURP 300V 16A TO263AB

FESB16FTHE3/81 数据手册

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FES16xT, FESF16xT, FESB16xT  
www.vishay.com  
Vishay General Semiconductor  
Ultrafast Plastic Rectifier  
FEATURES  
TO-220AC  
ITO-220AC  
• Power pack  
• Glass passivated pellet chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• High forward surge capability  
2
2
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C (for D2PAK (TO-263AB) package)  
1
1
FES16xT Series  
FESF16xT Series  
PIN 1  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
(for TO-220AC and ITO-220AC package)  
PIN 1  
CASE  
PIN 2  
PIN 2  
• AEC-Q101 qualified available  
D2PAK (TO-263AB)  
- Automotive ordering code: base P/NHE3  
K
(for ITO-220AC and D2PAK (TO-263AB package))  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
2
1
FESB16xT Series  
PIN 1  
K
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching mode  
power supplies, inverters, freewheeling diodes, DC/DC  
converters, and other power switching application.  
PIN 2  
HEATSINK  
DESIGN SUPPORT TOOLS AVAILABLE  
3
D
3
D
3D Models  
MECHANICAL DATA  
Case: TO-220AC, ITO-220AC, D2PAK (TO-263AB)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B,....)  
PRIMARY CHARACTERISTICS  
IF(AV)  
16 A  
VRRM  
50 V to 600 V  
250 A  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
IFSM  
trr  
VF  
35 ns, 50 ns  
0.975 V, 1.30 V, 1.50 V  
150 °C  
meets JESD 201 class 2 whisker test  
TJ max.  
Polarity: as marked  
Package  
TO-220AC, ITO-220AC, D2PAK (TO-263AB)  
Mounting Torque: 10 in-lbs max.  
Circuit configurations  
Single  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
FES  
FES  
FES  
FES  
FES  
16FT  
FES  
FES  
FES  
16JT  
PARAMETER  
SYMBOL  
UNIT  
16AT 16BT 16CT 16DT  
16GT 16HT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
V
V
V
Maximum DC blocking voltage  
100  
Maximum average forward  
rectified current at TC = 100 °C  
IF(AV)  
16  
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
TJ, TSTG  
VAC  
250  
A
°C  
V
Operating storage and temperature range  
-65 to +150  
1500  
Isolation voltage (ITO-220AC only)  
from terminal to heatsink t = 1 min  
Revision: 28-Jun-2019  
Document Number: 88599  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

FESB16FTHE3/81 替代型号

型号 品牌 替代类型 描述 数据表
FESB16FTHE3/45 VISHAY

完全替代

DIODE GEN PURP 300V 16A TO263AB
FESB16FT-E3/45 VISHAY

完全替代

DIODE GEN PURP 300V 16A TO263AB
FESB16FT-E3/81 VISHAY

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DIODE 16 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3,

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