5秒后页面跳转
FES6J PDF预览

FES6J

更新时间: 2024-11-30 11:10:31
品牌 Logo 应用领域
安森美 - ONSEMI 超快恢复二极管快速恢复二极管测试光电二极管
页数 文件大小 规格书
6页 202K
描述
超快整流器

FES6J 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:not_compliantFactory Lead Time:10 weeks
风险等级:1.53应用:ULTRA FAST RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.2 VJEDEC-95代码:TO-277
JESD-30 代码:R-PDSO-F3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:80 A
元件数量:1相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:6 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:600 V最大反向电流:2 µA
最大反向恢复时间:0.045 µs反向测试电压:600 V
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

FES6J 数据手册

 浏览型号FES6J的Datasheet PDF文件第2页浏览型号FES6J的Datasheet PDF文件第3页浏览型号FES6J的Datasheet PDF文件第4页浏览型号FES6J的Datasheet PDF文件第5页浏览型号FES6J的Datasheet PDF文件第6页 
Ultrafast Rectifiers,  
Surface Mount,  
6 A, 200 V - 600 V  
FES6, NRVFES6 Series  
Features  
www.onsemi.com  
Very Low Profile: Typical Height of 1.1 mm  
Ultrafast Recovery Time  
Low Forward Voltage Drop  
Low Thermal Resistance  
Very Stable Operation at Industrial Temperature, 150°C  
RoHS Compliant  
3
2
Green Molding Compound as per IEC61249 Standard  
Lead Free in Compliance with EU RoHS 2011/65/EU Directive  
With DAP Option Only  
1
TO−277−3LD  
CASE 340BQ  
NRV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
Anode 1  
Anode 2  
3
Cathode  
MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Repetitive Peak Reverse Voltage  
V
V
RRM  
MARKING DIAGRAM  
FES6D  
FES6G  
FES6J  
200  
400  
600  
$Y&Z&3  
*
Average Forward Rectified Current  
I
6
A
A
F(AV)  
Peak Forward Surge Current: 8.3 ms  
Single Half Sine−Wave Superimposed  
on Rated Load  
I
80  
FSM  
$Y  
= ON Semiconductor Logo  
= Assembly Plant Code  
= Date Code (Year & Week)  
= Specific Device Code  
FES6D, FES6G, FES6J  
&Z  
&3  
*
Operating Junction Temperature Range  
T
J
−55 to  
+175  
°C  
°C  
Storage Temperature Range  
T
−55 to  
+175  
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
Part Number  
FES6D  
Top Mark  
Package  
Shipping  
FES6D  
NRVFES6D*  
FES6G  
FES6G  
FES6J  
TO−277 3L (with DAP Option only)  
5000 / Tape & Reel  
NRVFES6G*  
FES6J  
NRVFES6J*  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP  
Capable.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
April, 2020 − Rev. 4  
FES6D/D  

与FES6J相关器件

型号 品牌 获取价格 描述 数据表
FES8 VISHAY

获取价格

FAST EFFICIENT PLASTIC RECTIFIER
FES8AT EIC

获取价格

Ultrafast Plastic Rectifiers
FES8AT VISHAY

获取价格

FAST EFFICIENT PLASTIC RECTIFIER
FES8AT FRONTIER

获取价格

Rectifier Diode, 1 Phase, 1 Element, 8A, Silicon
FES8ATHE3/45 VISHAY

获取价格

DIODE 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Re
FES8AT-HE3/45 VISHAY

获取价格

DIODE 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Re
FES8BT VISHAY

获取价格

FAST EFFICIENT PLASTIC RECTIFIER
FES8BT EIC

获取价格

Ultrafast Plastic Rectifiers
FES8BT FRONTIER

获取价格

Rectifier Diode, 1 Phase, 1 Element, 8A, Silicon
FES8BT-G SENSITRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-220AC, LEAD FREE, PLASTI