Datasheet > FES16MTR

FES16MTR

更新时间： 2024-11-02 02:50:23

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	250K
描述
16.0 Ampere Heatsink Package Negative Ultra Fast Recovery Rectifier Diode

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中文翻译

获取价格

数据手册

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FES16MTR 数据手册

FES16ATR thru FES16NTR

Pb Free Plating Product

FES16ATR thru FES16NTR

16.0 Ampere Heatsink Package Negative Ultra Fast Recovery Rectifier Diode

TO-220AC(TO-220-2L)

Unit:inch(mm)

Features

※ ThinkiSemi latest&matured process FRD/FRED

※ Low forward voltage drop

※ High current capability

.419(10.66)

.387(9.85)

.196(5.00)

.163(4.16)

.139(3.55)

MIN

.054(1.39)

.045(1.15)

※

Low reverse leakage current

※ High surge current capability

Application

※ Automotive Inverters and Solar Inverters

※ Car Audio Amplifiers and Sound Device Systems

※ Plating Power Supply,Motor Control,UPS and SMPS etc.

.038(0.96)

.019(0.50)

.025(0.65)MAX

Mechanical Data

※

Case: TO-220AC(TO-220-2L) with heat sink package

Epoxy: UL 94V-0 rate flame retardant

Internal Configuration

Base Backside

※ Terminals: Solderable per MIL-STD-202 method 208

※ Polarity: As marked on diode body

※ Mounting position: Any

.1(2.54)

Base Backside

※ Weight: 2.0 gram approximately

Negative

Positive

Suffix "T"

Suffix "TR"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase,half wave,60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

FES16ATR

FES16BTR

FES16CTR

FES16DTR

FES16ETR

FES16FTR

FES16GTR

FES16HTR

FES16ITR

FES16JTR

FES16KTR

FES16LTR

PARAMETER

SYMBOL

FES16MTR

FES16NTR

UNIT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

1200

840

Maximum DC Blocking Voltage

1000

1200

Maximum Average Forward Rectified

Current TC=125℃

16.0

300

IF(AV)

IFSM

(Total Device 16.0A)

Peak Forward Surge Current, 8.3ms single Half

sine-wave superimposed on rated load (JEDEC

method)(Per Diode/Per Leg)

Maximum Instantaneous Forward Voltage

@16.0A(Per Diode/Per Leg)

(Typical)

1.50-1.70

0.85-0.95

1.00-1.25

1.25-1.50

Maximum DC Reverse Current @TJ=25℃

At Rated DC Blocking Voltage @TJ=125℃

1.0

100

μA

Maximum Reverse Recovery Time (Note1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

25-50

50-75

Trr

160

1.50

RθJC

℃/W

Operating Junction and Storage

Temperature Range

-55 to +175

TJ,TSTG

℃

Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.

Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

Note:(3)Thermal Resistance junction to case.

Page 1/2

Rev.10T

http://www.thinkisemi.com.tw/

中文翻译

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与FES16MTR相关器件

型号	品牌	获取价格	描述	数据表
FES16NT	THINKISEMI	获取价格	16.0 Ampere Heatsink Package Positive Ultra Fast Recovery Rectifier Diode
FES16NTR	THINKISEMI	获取价格	16.0 Ampere Heatsink Package Negative Ultra Fast Recovery Rectifier Diode
FES16xT	VISHAY	获取价格	Ultrafast Plastic Rectifier
FES16XX	EIC	获取价格	Ultrafast Plastic Rectifiers
FES1A	ETC	获取价格	Ultrafast Recovery Rectifiers
FES1B	ETC	获取价格	Ultrafast Recovery Rectifiers
FES1D	ETC	获取价格	Ultrafast Recovery Rectifiers
FES1DD(LS)	DIODES	获取价格	1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
FES1DE	DIODES	获取价格	1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER
FES1DE(LS)	DIODES	获取价格	ULTRA-FAST RECOVERY RECTIFIER

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