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FDMF6823B PDF预览

FDMF6823B

更新时间: 2024-02-05 22:58:48
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 服务器主板节能技术
页数 文件大小 规格书
19页 1401K
描述
Extra-Small, High-Performance, High-Frequency DrMOS Module

FDMF6823B 数据手册

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Absolute Maximum Ratings  
Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only.  
Symbol  
Parameter  
Min.  
Max.  
Unit  
VCIN  
VDRV  
Supply Voltage  
Drive Voltage  
Referenced to CGND  
-0.3  
-0.3  
-0.3  
-0.3  
-0.3  
-0.3  
-0.3  
-0.3  
-0.3  
-0.3  
-0.3  
-0.3  
-0.3  
-0.3  
-8.0  
6.0  
6.0  
V
V
Referenced to CGND  
Referenced to CGND  
Referenced to CGND  
Referenced to CGND  
VDISB#  
VPWM  
Output Disable  
PWM Signal Input  
6.0  
V
6.0  
V
VSMOD# Skip Mode Input  
VGL  
VTHWN# Thermal Warning Flag  
6.0  
V
Low Gate Manufacturing Test Pin Referenced to CGND  
6.0  
V
Referenced to CGND  
6.0  
V
VIN  
Power Input  
Referenced to PGND, CGND  
Referenced to VSWH, PHASE  
Referenced to CGND  
25.0  
6.0  
V
V
VBOOT  
Bootstrap Supply  
25.0  
6.0  
V
Referenced to VSWH, PHASE  
Referenced to CGND  
V
VGH  
VPHS  
VSWH  
High Gate Manufacturing Test Pin  
PHASE  
25.0  
25.0  
25.0  
28.0  
22.0  
25.0  
7.0  
V
Referenced to CGND  
V
Referenced to PGND, CGND (DC Only)  
Referenced to PGND, <20ns  
Referenced to VDRV  
V
Switch Node Input  
V
V
VBOOT  
ITHWN#  
IO(AV)  
Bootstrap Supply  
THWN# Sink Current  
Output Current(1)  
Referenced to VDRV, <20ns  
V
-0.1  
-40  
mA  
f
SW=300kHz, VIN=12V, VO=1.0V  
55  
A
fSW=1MHz, VIN=12V, VO=1.0V  
50  
θJPCB  
TA  
Junction-to-PCB Thermal Resistance  
Ambient Temperature Range  
Maximum Junction Temperature  
Storage Temperature Range  
2.7  
°C/W  
°C  
+125  
+150  
+150  
TJ  
°C  
TSTG  
-55  
°C  
Human Body Model, JESD22-A114  
Charged Device Model, JESD22-C101  
2000  
2500  
ESD  
Electrostatic Discharge Protection  
V
Note:  
1. IO(AV) is rated using Fairchild’s DrMOS evaluation board, at TA = 25°C, with natural convection cooling. This rating  
is limited by the peak DrMOS temperature, TJ = 150°C, and varies depending on operating conditions and PCB  
layout. This rating can be changed with different application settings.  
Recommended Operating Conditions  
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended  
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not  
recommend exceeding them or designing to Absolute Maximum Ratings.  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Unit  
VCIN  
VDRV  
VIN  
Control Circuit Supply Voltage  
4.5  
4.5  
3.0  
5.0  
5.0  
5.5  
5.5  
16.0(2)  
V
V
V
Gate Drive Circuit Supply Voltage  
Output Stage Supply Voltage  
12.0  
Note:  
2. Operating at high VIN can create excessive AC overshoots on the VSWH-to-GND and BOOT-to-GND nodes  
during MOSFET switching transients. For reliable DrMOS operation, VSWH-to-GND and BOOT-to-GND must  
remain at or below the Absolute Maximum Ratings shown in the table above. Refer to the “Application  
Information” and “PCB Layout Guidelines” sections of this datasheet for additional information.  
© 2011 Fairchild Semiconductor Corporation  
FDMF6823B • Rev. 1.0.2  
www.fairchildsemi.com  
4

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