DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH),
GreenBridget Series of
High-Efficiency Bridge
Rectifiers
V
R
MAX
I MAX
D
DSS
DS(ON)
100 V
110 W @ 10 V
6 A
Pin 1
G4
D1/D4
D3/S4
G3
G1
D1/D4
S1/D2
G2
S2
S3
S3
S2
100 V, 6 A, 110 mW
WDFN12 5 x 4.5, 0.8P
(MLP 4.5 x 5)
FDMQ8403
CASE 511CR
General Description
This quad MOSFET solution provides ten−fold improvement
in power dissipation over diode bridge.
MARKING DIAGRAM
$Y&Z&2&K
FDMQ
Features
• Max r
• Max r
= 110 mW at V = 10 V, I = 3 A
GS D
DS(on)
DS(on)
8403
= 175 mW at V = 6 V, I = 2.4 A
GS
D
• Substantial Efficiency Benefit in PD Solutions
FDMQ8403 = Specific Device Code
• This Device is Pb−Free, Halid Free and is RoHS Compliant
$Y
&Z
&2
&K
= onsemi Logo
= Assembly plant code
= Date Code format (Year and Week)
= Lot Run Traceability Code
Applications
• High−Efficiency Bridge Rectifiers
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
PIN CONNECTION
Symbol
Rating
Drain to Source Voltage
Value
100
20
Unit
V
V
DS
V
GS
6
5
4
3
2
1
S2
S2
7
8
S3
S3
G3
Q3 Q2
Gate to Source Voltage
V
I
D
Drain Current
A
− Continuous (Package Limited)
− Continuous (Silicon Limited)
− Continuous (Note 1a.)
− Pulsed
T
T
A
= 25°C
= 25°C
6
9
3.1
12
C
C
9
G2
T = 25°C
D3/S4
D1/D4
10
11
S1/D2
D1/D4
G1
Q1
Q4
P
D
Power Dissipation
T
= 25°C
C
17
W
Power Dissipation (Note 1a.)
T = 25°C
1.9
A
G4 12
T , T
Operating and Storage Junction Temperature −55 to
Range +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on
page 5 of this data sheet.
THERMAL CHARACTERISTICS
Symbol
Rating
Value
Unit
R
Thermal Resistance, Junction to Ambient
(Note 1a.)
65
°C/W
q
JA
R
Thermal Resistance, Junction to Ambient
(Note 1b.)
135
q
JA
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
July, 2022 − Rev. 3
FDMQ8403/D