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FDMQ8403 PDF预览

FDMQ8403

更新时间: 2023-09-03 20:39:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 338K
描述
N 沟道,PowerTrench® MOSFET,GreenBridge™ 系列高效桥式整流器,100V,6A,110mΩ

FDMQ8403 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET – N-Channel,  
POWERTRENCH),  
GreenBridget Series of  
High-Efficiency Bridge  
Rectifiers  
V
R
MAX  
I MAX  
D
DSS  
DS(ON)  
100 V  
110 W @ 10 V  
6 A  
Pin 1  
G4  
D1/D4  
D3/S4  
G3  
G1  
D1/D4  
S1/D2  
G2  
S2  
S3  
S3  
S2  
100 V, 6 A, 110 mW  
WDFN12 5 x 4.5, 0.8P  
(MLP 4.5 x 5)  
FDMQ8403  
CASE 511CR  
General Description  
This quad MOSFET solution provides tenfold improvement  
in power dissipation over diode bridge.  
MARKING DIAGRAM  
$Y&Z&2&K  
FDMQ  
Features  
Max r  
Max r  
= 110 mW at V = 10 V, I = 3 A  
GS D  
DS(on)  
DS(on)  
8403  
= 175 mW at V = 6 V, I = 2.4 A  
GS  
D
Substantial Efficiency Benefit in PD Solutions  
FDMQ8403 = Specific Device Code  
This Device is PbFree, Halid Free and is RoHS Compliant  
$Y  
&Z  
&2  
&K  
= onsemi Logo  
= Assembly plant code  
= Date Code format (Year and Week)  
= Lot Run Traceability Code  
Applications  
HighEfficiency Bridge Rectifiers  
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
PIN CONNECTION  
Symbol  
Rating  
Drain to Source Voltage  
Value  
100  
20  
Unit  
V
V
DS  
V
GS  
6
5
4
3
2
1
S2  
S2  
7
8
S3  
S3  
G3  
Q3 Q2  
Gate to Source Voltage  
V
I
D
Drain Current  
A
Continuous (Package Limited)  
Continuous (Silicon Limited)  
Continuous (Note 1a.)  
Pulsed  
T
T
A
= 25°C  
= 25°C  
6
9
3.1  
12  
C
C
9
G2  
T = 25°C  
D3/S4  
D1/D4  
10  
11  
S1/D2  
D1/D4  
G1  
Q1  
Q4  
P
D
Power Dissipation  
T
= 25°C  
C
17  
W
Power Dissipation (Note 1a.)  
T = 25°C  
1.9  
A
G4 12  
T , T  
Operating and Storage Junction Temperature 55 to  
Range +150  
°C  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information on  
page 5 of this data sheet.  
THERMAL CHARACTERISTICS  
Symbol  
Rating  
Value  
Unit  
R
Thermal Resistance, Junction to Ambient  
(Note 1a.)  
65  
°C/W  
q
JA  
R
Thermal Resistance, Junction to Ambient  
(Note 1b.)  
135  
q
JA  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
July, 2022 Rev. 3  
FDMQ8403/D  

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