Datasheet > FDMQ8403

FDMQ8403

更新时间： 2023-09-03 20:39:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	338K
描述
N 沟道，PowerTrench® MOSFET，GreenBridge™ 系列高效桥式整流器，100V，6A，110mΩ

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FDMQ8403 数据手册

FDMQ8403

TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted.

= 10 V

PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% MAX

= 5 V

= 8 V

= 6 V

= 7 V

= 6 V

= 5 V

= 7 V

= 10 V

PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% MAX

= 8 V

I , DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

Figure 2. Normalized On−Resistance vs. Drain

Figure 1. On Region Characteristics

Current and Gate Voltage

2.0

1.8

1.6

1.4

1.2

400

PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% MAX

= 3 A

= 10 V

300

200

100

T = 125°C

1.0

0.8

0.6

T = 25°C

−75 −50 −25

100 125 150

T , JUNCTION TEMPERATURE (°C)

, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance

vs. Junction Temperature

Figure 4. On−Resistance vs. Gate

to Source Voltage

PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% MAX

= 0 V

T = 150°C

= 5 V

0.1

T = 150°C

T = 25°C

0.01

0.001

T = −55°C

0.2

0.4

0.6

0.8

1.0

1.2

, GATE TO SOURCE VOLTAGE (V)

, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Source to Drain Diode

Forward Voltage vs. Source Current

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1 234 5 6 7

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