5秒后页面跳转
FDMS0310AS PDF预览

FDMS0310AS

更新时间: 2024-02-02 20:39:22
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
9页 471K
描述
N 沟道,PowerTrench® SyncFET™,30V,22A,4.3mΩ

FDMS0310AS 数据手册

 浏览型号FDMS0310AS的Datasheet PDF文件第2页浏览型号FDMS0310AS的Datasheet PDF文件第3页浏览型号FDMS0310AS的Datasheet PDF文件第4页浏览型号FDMS0310AS的Datasheet PDF文件第5页浏览型号FDMS0310AS的Datasheet PDF文件第6页浏览型号FDMS0310AS的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET – N-Channel,  
POWERTRENCH), SyncFETt  
V
R
MAX  
I MAX  
D
DS  
DS(on)  
30 V  
4.3 mW @ 10 V  
5.2 mW @ 4.5 V  
22 A  
30 V, 22 A, 4.3 mW  
Pin 1  
S
S
FDMS0310AS  
General Description  
S
G
The FDMS0310AS has been designed to minimize losses in power  
conversion application. Advancements in both silicon and package  
D
D
D
D
technologies have been combined to offer the lowest R  
while  
DS(on)  
Top  
Bottom  
maintaining excellent switching performance. This device has  
the added benefit of an efficient monolithic Schottky body diode.  
PQFN8 5 y 6, 1.27P  
(Power 56)  
CASE 483AE  
Features  
Max R  
Max R  
= 4.3 mW at V = 10 V, I = 19 A  
GS D  
DS(on)  
= 5.2 mW at V = 4.5 V, I = 17 A  
DS(on)  
GS  
D
ELECTRICAL CONNECTION  
Advanced Package and Silicon Combination for Low R  
and High Efficiency  
DS(on)  
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
SyncFET Schottky Body Diode  
MSL1 Robust Package Design  
100% UIL Tested  
PbFree, Halide Free and RoHS Compliant  
Applications  
Synchronous Rectifier for DC/DC Converters  
Notebook Vcore/GPU Low Side Switch  
Networking Point of Load Low Side Switch  
Telecom Secondary Side Rectification  
N-CHANNEL MOSFET  
MARKING DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
&Z&3&K  
FDMS  
0310AS  
Symbol  
Parameter  
Drain to Source Voltage  
Value  
Unit  
V
V
DS  
V
GS  
30  
20  
Gate to Source Voltage (Note 4)  
Drain Current:  
Continuous (Package limited)  
Continuous (Silicon limited)  
Continuous T = 25°C (Note 1a)  
V
I
D
A
T
C
= 25°C  
22  
80  
19  
100  
C
&Z  
&3  
= Assembly Plant Code  
= 3Digit Date Code  
(Year and Week)  
T
= 25°C  
A
Pulsed  
&K  
= 2Digit Lot Run Code  
FDMS0310AS = Specific Device Code  
E
Single Pulse Avalanche Energy (Note 3)  
Power Dissipation:  
33  
mJ  
W
AS  
P
D
T
= 25°C  
41  
2.5  
C
ORDERING INFORMATION  
T = 25°C (Note 1a)  
A
T , T  
Operating and Storage Junction  
Temperature Range  
55 to  
+150  
°C  
J
STG  
Device  
Package  
Shipping  
FDMS0310AS PQFN8 5X6, 1.27P  
(PbFree, Halide  
3000 /  
Tape & Reel  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
April, 2023 Rev. 3  
FDMS0310AS/D  

与FDMS0310AS相关器件

型号 品牌 描述 获取价格 数据表
FDMS0310S ONSEMI N 沟道 PowerTrench® SyncFET™ 30V,42A,4mΩ

获取价格

FDMS0312AS ONSEMI N 沟道,PowerTrench® SyncFET™,30V,22A,5.0mΩ

获取价格

FDMS0312S FAIRCHILD N-Channel PowerTrench® SyncFETTM

获取价格

FDMS0312S ONSEMI N 沟道,PowerTrench® SyncFET™,30V,42A,4.9mΩ

获取价格

FDMS037N08B ONSEMI N 沟道,PowerTrench® MOSFET,75V,100A,3.7mΩ

获取价格

FDMS039N08B FAIRCHILD New Products, Tips and Tools for Power and Mobile Applications

获取价格