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FDML7610S PDF预览

FDML7610S

更新时间: 2024-02-08 21:56:54
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
16页 661K
描述
30 V非对称双N沟道MOSFET PowerTrench®功率级

FDML7610S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:MLP
包装说明:SMALL OUTLINE, R-PDSO-N6针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.71
Is Samacsys:N配置:SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):60 A
最大漏极电流 (ID):12 A最大漏源导通电阻:0.0075 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-N6
JESD-609代码:e4湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.2 W
最大脉冲漏极电流 (IDM):40 A认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDML7610S 数据手册

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