5秒后页面跳转
FDH44N50 PDF预览

FDH44N50

更新时间: 2024-02-02 08:33:18
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管功率场效应晶体管脉冲PC局域网
页数 文件大小 规格书
6页 165K
描述
44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET

FDH44N50 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:TO-247, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:12 weeks风险等级:0.95
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:438635Samacsys Pin Count:3
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-247Samacsys Released Date:2017-09-28 01:20:27
Is Samacsys:N雪崩能效等级(Eas):1500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):44 A
最大漏极电流 (ID):44 A最大漏源导通电阻:0.12 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):750 W最大脉冲漏极电流 (IDM):176 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDH44N50 数据手册

 浏览型号FDH44N50的Datasheet PDF文件第2页浏览型号FDH44N50的Datasheet PDF文件第3页浏览型号FDH44N50的Datasheet PDF文件第4页浏览型号FDH44N50的Datasheet PDF文件第5页浏览型号FDH44N50的Datasheet PDF文件第6页 
August 2002  
FDH44N50  
44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET  
Applications  
Features  
Low Gate Charge  
Requirement  
Q
results in Simple Drive  
Switch Mode Power Supplies(SMPS), such as  
g
PFC Boost  
Improved Gate, Avalanche and High Reapplied dv/dt  
Ruggedness  
Two-Switch Forward Converter  
Single Switch Forward Converter  
Flyback Converter  
Reduced r  
DS(ON)  
Buck Converter  
Reduced Miller Capacitance and Low Input Capacitance  
Improved Switching Speed with Low EMI  
175°C Rated Junction Temperature  
High Speed Switching  
Package  
Symbol  
JEDEC TO-247  
SOURCE  
DRAIN  
GATE  
D
G
DRAIN  
(FLANGE)  
S
o
Absolute Maximum Ratings T = 25 C unless otherwise noted  
C
Symbol  
Parameter  
Drain to Source Voltage  
Ratings  
500  
Units  
V
V
V
DSS  
V
Gate to Source Voltage  
±30  
GS  
Drain Current  
o
Continuous (T = 25 C, V = 10V)  
44  
A
A
C
GS  
I
D
o
Continuous (T = 100 C, V = 10V)  
32  
C
GS  
1
Pulsed  
176  
A
Power dissipation  
750  
5
W
P
D
o
o
Derate above 25 C  
W/ C  
o
T , T  
Operating and Storage Temperature  
Soldering Temperature for 10 seconds  
Mounting Torque, 8-32 or M3 Screw  
-55 to 175  
C
J
STG  
o
300 (1.6mm from case)  
10ibf*in (1.1N*m)  
C
Thermal Characteristics  
o
R
Thermal Resistance Junction to Case  
0.2  
C/W  
θJC  
o
R
Thermal Resistance Case to Sink, Flat, Greased Surface  
Thermal Resistance Junction to Ambient  
0.24  
40  
C/W  
C/W  
θCS  
o
R
θJA  
©2002 Fairchild Semiconductor Corporation  
FDH44N50 Rev. A4, August 2002  

FDH44N50 替代型号

型号 品牌 替代类型 描述 数据表
SPW20N60C3 INFINEON

功能相似

Cool MOS™ Power Transistor
STW20NK50Z STMICROELECTRONICS

功能相似

N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247
STW12NK90Z STMICROELECTRONICS

功能相似

N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET

与FDH44N50相关器件

型号 品牌 获取价格 描述 数据表
FDH45N50F FAIRCHILD

获取价格

500V N-Channel MOSFET, FRFET
FDH45N50F_0605 FAIRCHILD

获取价格

500V N-Channel MOSFET, FRFET
FDH45N50F_08 FAIRCHILD

获取价格

500V N-Channel MOSFET, FRFET
FDH45N50F_F133 FAIRCHILD

获取价格

500V N-Channel MOSFET, FRFET
FDH45N50F-F133 ONSEMI

获取价格

功率 MOSFET,N 沟道,UniFETTM,FRFET®,500 V,45 A,120
FDH50G ADAM-TECH

获取价格

Board Connector, 50 Contact(s), 4 Row(s), 0.2 inch Pitch, IDC Terminal, Black Insulator
FDH50G30 ADAM-TECH

获取价格

DIP Connector, 50 Contact(s), 4 Row(s), Male, 0.2 inch Pitch, IDC Terminal, Black Insulato
FDH50GGY ADAM-TECH

获取价格

DIP Connector, 50 Contact(s), 4 Row(s), Male, 0.2 inch Pitch, IDC Terminal, Gray Insulator
FDH50N50 FAIRCHILD

获取价格

500V N-Channel MOSFET
FDH50N50_F133 FAIRCHILD

获取价格

500V N-Channel MOSFET