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FDH5500-F085 PDF预览

FDH5500-F085

更新时间: 2023-09-03 20:37:05
品牌 Logo 应用领域
安森美 - ONSEMI 局域网
页数 文件大小 规格书
8页 364K
描述
55 V、75 A、5.2 mΩ、TO-247N 沟道 UltraFET®

FDH5500-F085 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:ROHS COMPLIANT PACKAGE-3Reach Compliance Code:not_compliant
风险等级:5.21配置:Single
最大漏极电流 (Abs) (ID):75 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
端子数量:3最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):375 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

FDH5500-F085 数据手册

 浏览型号FDH5500-F085的Datasheet PDF文件第2页浏览型号FDH5500-F085的Datasheet PDF文件第3页浏览型号FDH5500-F085的Datasheet PDF文件第4页浏览型号FDH5500-F085的Datasheet PDF文件第5页浏览型号FDH5500-F085的Datasheet PDF文件第6页浏览型号FDH5500-F085的Datasheet PDF文件第7页 
MOSFET – Power, N-Channel,  
UltraFET  
55 V, 75 A, 7 mW  
FDH5500-F085  
Features  
www.onsemi.com  
Typ R  
Typ Q  
= 5.2 mat V = 10 V, I = 75 A  
GS D  
DS(on)  
= 118 nC at V = 10 V  
g(10)  
GS  
Simulation Models  
V
R
MAX  
I MAX  
D
DSS  
DS(ON)  
®
Temperature Compensated PSPICEt and Saber Models  
55 V  
7 mꢀ  
75 A  
Peak Current vs Pulse Width Curve  
UIS Rating Curve  
D
AECQ101 Qualified and PPAP Capable  
This Device is PbFree and is RoHS Compliant  
Applications  
G
DC Linear Mode Control  
Solenoid and Motor Control  
Switching Regulators  
Automotive Systems  
S
DRAIN  
(FLANGE)  
G
D
S
JEDEC TO247  
CASE 340CK  
MARKING DIAGRAM  
$Y&Z&3&K  
FDH5500  
$Y  
&Z  
&3  
&K  
= ON Semiconductor Logo  
= Assembly Plant Code  
= Data Code (Year & Week)  
= Lot  
FDH5500  
= Specific Device Code  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
April, 2020 Rev. 2  
FDH5500F085/D  

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