FDH038AN08A1

更新时间： 2024-11-15 22:31:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	209K
描述
N-Channel PowerTrench MOSFET

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数据手册

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FDH038AN08A1 数据手册

February 2003

FDH038AN08A1

N-Channel PowerTrench MOSFET

75V, 80A, 3.8mΩ

Features

Applications

•

r_DS(ON)= 3.5mΩ (Typ.), V_GS= 10V, I_D= 80A

Q_g(tot) = 125nC (Typ.), V_GS= 10V

Internal Gate Resistor, Rg = 20Ω(Typ.)

Low Miller Charge

•

42V Automotive Load Control

Starter / Alternator Systems

Electronic Power Steering Systems

Electronic Valve Train Systems

DC-DC converters and Off-line UPS

Low Q_RRBody Diode

UIS Capability (Single Pulse and Repetitive Pulse)

Qualified to AEC Q101

Distributed Power Architectures and VRMs

Primary Switch for 24V and 48V systems

Formerly developmental type 82690

SOURCE

DRAIN

GATE

TO-247

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

±20

Continuous (T_C< 158^oC, V_GS= 10V)

Continuous (T_A= 25^oC, V_GS= 10V, with R_θJA= 30^oC/W)

Pulsed

I_D

Figure 4

1.17

E_AS

Single Pulse Avalanche Energy (Note 1)

Power dissipation

Derate above 25^oC

450

P_D

3.0

W/^oC

^oC

T_J, T_STG

Operating and Storage Temperature

-55 to 175

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance Junction to Case TO-247

Thermal Resistance Junction to Ambient TO-247

0.33

^oC/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

FDH038AN08A1 Rev A

12 3 4 5 6 7...10

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