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FDH055N15A PDF预览

FDH055N15A

更新时间: 2024-11-17 11:15:39
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 455K
描述
N 沟道 PowerTrench® MOSFET 150V,167A,5.9mΩ

FDH055N15A 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:ROHS COMPLIANT PACKAGE-3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:0.95其他特性:ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):835 mJ配置:COMPLEX
最小漏源击穿电压:150 V最大漏极电流 (Abs) (ID):156 A
最大漏极电流 (ID):156 A最大漏源导通电阻:0.0059 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:2端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):429 W
最大脉冲漏极电流 (IDM):668 A子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDH055N15A 数据手册

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DATA SHEET  
www.onsemi.cn  
MOSFET – N ṿᬣ,  
POWERTRENCH)  
V
R
MAX  
I MAX  
D
DS  
DS(on)  
150 V  
5.9 m@ 10 V  
167 A  
150 V, 167 A, 5.9 mW  
FDH055N15A  
ᛄ៮  
ꢀNꢀꢁMOSFET ꢂꢃ൩ᫎਫ਼ꢄꢅPOWERTRENCH ꢆꢇ  
,ꢈꢅꢂꢆꢇꢈꢉꢊꢋꢌꢍꢎꢋꢌꢍꢏꢐꢑꢒꢎ  
ꢓꢔꢕꢏꢐꢖꢗ。  
N-CHANNEL MOSFET  
ꢀ  
R  
= 4.8 m(͘५Ȝ)@ V = 10 V, I = 120 A  
GS D  
DS(on)  
ꢘꢓꢔꢋᇋ  
ꢘꢍ᧥ᥡꢌꢒ  
ꢏꢀꢁᑠᤏ
׏
ᥡꢍR  
ѿ
٬
ꢓꢌꢖꢗꢏѻ  
ר
RoHS ᧧Φ  
G
D
S
DS(on)  
TO2473LD  
CASE 340CK  
Öꢈៀ
ڡ
 
MARKING DIAGRAM  
✈  
nꢁATX / ᣭҁ
/ ǁ PSU
׬
ᵅ᝔ꢖ  
ꢌꢛꢐᒄꢌꢜ  
҈٬⛽
ꢌꢟ  
ꢘᆎ५ଊꢠꢏꢡָ
 
&Z&3&K  
FDH  
055N15A  
&Z  
&3  
&K  
= Assembly Plant Code  
= Numeric Date Code  
= Lot Code  
FDH055N15A  
= Specific Device Code  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
July, 2023 Rev. 5  
FDH055N15ACN/D  

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