Datasheet > FDD86581-F085

FDD86581-F085

更新时间： 2023-09-03 20:30:42

品牌	Logo	应用领域
安森美 - ONSEMI		开关晶体管
页数	文件大小	规格书
7页	2524K
描述
N 沟道，PowerTrench® MOSFET，60 V，25 A，15 mΩ

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FDD86581-F085 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
风险等级：	0.81	雪崩能效等级（Eas）：	14.5 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (Abs) (ID)：	25 A
最大漏极电流 (ID)：	25 A	最大漏源导通电阻：	0.015 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-252
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	48.4 W
参考标准：	AEC-Q101	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
最大关闭时间（toff）：	28 ns	最大开启时间（吨）：	21 ns

FDD86581-F085 数据手册

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与FDD86581-F085相关器件

型号	品牌	获取价格	描述	数据表
FDD8750	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET 25V, 2.7A, 40mohm
FDD8770	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET 25V, 35A, 4.0mOHM
FDD8770	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，25V，35A，4.0mΩ
FDD8778	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET 25V, 35A, 14mohm
FDD8778	ONSEMI	获取价格	N 沟道 PowerTrench® MOSFET 25V，35A，14mΩ
FDD8780	FAIRCHILD	获取价格	N-Channel PowerTrench? MOSFET 25V, 35A, 8.5mOhm
FDD8780	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，25V，35A，8.5mΩ
FDD8780	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:25V;持续漏极电流（Id）（在25°C时
FDD8780-G	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDD8782	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET

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