FDD2670_NL

更新时间： 2024-11-24 13:07:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
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5页	96K
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FDD2670_NL 数据手册

November 2001

FDD2670

200V N-Channel PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

• 3.6 A, 200 V. R_DS(ON)= 130 mΩ @ V_GS= 10 V

• Low gate charge

• Fast switching speed

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

RDS_(ON)specifications.

• High performance trench technology for extremely

low R_DS(ON)

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

• High power and current handling capability

TO-252

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

200

V_GSS

I_D

Gate-Source Voltage

±20

Drain Current – Continuous

Drain Current – Pulsed

Maximum Power Dissipation @ T_C= 25°C

@ T_A= 25°C

(Note 1)

3.6

P_D

(Note 1)

(Note 1a)

(Note 1b)

(Note 3)

3.2

1.3

@ T_A= 25°C

dv/dt

Peak Diode Recovery dv/dt

3.2

V/ns

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

(Note 1)

1.8

R_θJC

°C/W

(Note 1b)

R_θJA

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDD2670

13’’

16mm

2500 units

FDD2670 Rev C1(W)

2001 Fairchild Semiconductor Corporation

12 3 4 5

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