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FDB2572 PDF预览

FDB2572

更新时间: 2024-11-14 22:31:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关PC
页数 文件大小 规格书
11页 263K
描述
N-Channel PowerTrench MOSFET 150V, 29A, 54mз

FDB2572 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:D2PAK
包装说明:TO-263AB, 3 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.89
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:166958Samacsys Pin Count:4
Samacsys Part Category:Integrated CircuitSamacsys Package Category:TO-XXX (Inc. DPAK)
Samacsys Footprint Name:TO263(DDPAK)Samacsys Released Date:2015-04-13 16:42:47
Is Samacsys:N雪崩能效等级(Eas):36 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:150 V最大漏极电流 (Abs) (ID):4 A
最大漏极电流 (ID):4 A最大漏源导通电阻:0.054 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):135 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDB2572 数据手册

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September 2002  
FDB2572 / FDP2572  
N-Channel PowerTrench® MOSFET  
150V, 29A, 54mΩ  
Features  
Applications  
rDS(ON) = 45m(Typ.), VGS = 10V, ID = 9A  
Qg(tot) = 26nC (Typ.), VGS = 10V  
Low Miller Charge  
DC/DC converters and Off-Line UPS  
Distributed Power Architectures and VRMs  
Primary Switch for 24V and 48V Systems  
High Voltage Synchronous Rectifier  
Direct Injection / Diesel Injection Systems  
42V Automotive Load Control  
Low QRR Body Diode  
UIS Capability (Single Pulse and Repetitive Pulse)  
Qualified to AEC Q101  
Formerly developmental type 82860  
Electronic Valve Train Systems  
D
DRAIN  
(FLANGE)  
SOURCE  
DRAIN  
GATE  
GATE  
G
SOURCE  
DRAIN  
(FLANGE)  
TO-263AB  
FDB SERIES  
TO-220AB  
FDP SERIES  
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted  
Symbol  
VDSS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
150  
V
V
±20  
Continuous (TC = 25oC, VGS = 10V)  
Continuous (TC = 100oC, VGS = 10V)  
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 43oC/W)  
Pulsed  
29  
20  
A
A
ID  
4
A
Figure 4  
36  
A
EAS  
Single Pulse Avalanche Energy (Note 1)  
Power dissipation  
Derate above 25oC  
mJ  
W
W/oC  
oC  
135  
PD  
0.9  
TJ, TSTG  
Operating and Storage Temperature  
-55 to 175  
Thermal Characteristics  
RθJC  
RθJA  
RθJA  
Thermal Resistance Junction to Case TO-220,TO-263  
1.11  
62  
oC/W  
oC/W  
oC/W  
Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2)  
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area  
43  
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a  
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/  
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.  
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems  
certification.  
©2002 Fairchild Semiconductor Corporation  
FDB2572 / FDP2572 Rev. B  

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