Datasheet > FCX591

FCX591

更新时间： 2024-11-21 10:31:59

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
2页	327K
描述
TRANSISTOR (PNP)

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中文翻译

获取价格

数据手册

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FCX591 数据手册

FCX591

TRANSISTOR (PNP)

SOT-89

FEATURES

1. BASE

Power dissipation

2. COLLECTOR

3. EMITTER

MARKING:P1

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-80

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-60

-5

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

-1

P_C

0.5

℃

T_J

150

-65-150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-80

-60

-5

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=-100μA , I_E=0

I_C= -10mA , I_B=0

I_E=-100μA, I_C=0

V_CB=-60 V , I_E=0

V_(BR)CEO

V_(BR)EBO

I_CBO

-0.1

μA

Emitter cut-off current

I_EBO

V_EB=-4 V ,

I_C=0

Collector- Emitter cut-off current

I_CES

V_CES=-60 V, I_E=0

V_CE=-5V, I_C= -1mA

100

V_CE=-5V, I_C= -500mA

300

h_FE

DC current gain

V_CE=-5V, I_C= -1A

V_CE=-5V, I_C= -2A

I_C=-500 mA, I_B= -50mA

I_C=-1A, I_B= -100mA

-0.3

-0.6

Collector-emitter saturation voltage

V_CE(sat)

Base-emitter saturation voltage

Base-emitter voltage

V_BE(sat)

V_BE

I_C=-1A, I_B= -100mA

V_CE=-5V, I_C= -1A

-1.2

-1

V_CE= -10V, I_C=- 50mA

f =100MHz

Transition frequency

f _T

C_ob

150

MHz

Collector output capacitance

V_CB=-10V, f=1MHz

*Pulse width=300s. Duty cycle 2%

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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