Datasheet > FCX605U

FCX605U

更新时间： 2024-09-17 14:55:55

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
4页	325K
描述
达林顿三极管

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中文翻译

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数据手册

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FCX605U 数据手册

FCX605U

NPN Silicon High Voltage Darlington Transistor

Features

• Low Saturation Voltage

Application

• Various driving functions, Lamps, Motors, Relays and solenoids

• High output current switches

Absolute Maximum Ratings(T_a= 25℃ unless otherwise specified)

Parameter

Collector Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

140

120

Unit

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current, Pulsed

I_CM

1 ¹⁾

Power Dissipation

P_D

2.8 ²⁾

Operating Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 150

℃

T_stg

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

Unit

125 ¹⁾

Thermal Resistance from Junction to Ambient

℃/W

45 ²⁾

Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 4

Dated: 06/07/2023 Rev: 02

12 3 4

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