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FCX593

更新时间: 2024-11-20 22:31:47
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管高压局域网
页数 文件大小 规格书
1页 24K
描述
PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FCX593 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PSSO-F3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.3外壳连接:COLLECTOR
最大集电极电流 (IC):1 A基于收集器的最大容量:5 pF
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PSSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzVCEsat-Max:0.3 V
Base Number Matches:1

FCX593 数据手册

  
SOT89 PNP SILICON PLANAR  
HIGH VOLTAGE TRANSISTOR  
FCX593  
ISSUE 3 - NOVEMBER 1995  
C
COMPLIMENTARY TO FMMT493  
PARTMARKING DETAIL - P93  
E
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-120  
-100  
V
-5  
V
Peak Pulse Current  
-2  
A
Continuous Collector Current  
Base Current  
IC  
-1  
-200  
A
IB  
mA  
W
°C  
Power Dissipation at Tamb=25°C  
Ptot  
1
Operating and Storage Temperature Range  
Tj:Tstg  
-65 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN. MAX. UNITCONDITIONS.  
Breakdown Voltages  
V(BR)CBO -120  
V(BR)CEO -100  
V(BR)EBO -5  
ICBO  
V
V
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
Cut-Off Currents  
-100 nA VCB=-100V  
-100 nA VEB=-4V  
-100 nA VCES=-100V  
IEBO  
ICES  
Saturation Voltages  
VCE(sat)  
-0.2  
-0.3  
V
V
IC=-250mA,IB=-25mA*  
IC=-500mA IB=-50mA*  
VBE(sat)  
-1.1  
V
IC=-500mA,IB=-50mA*  
Base-Emitter Turn-on Voltage  
VBE(on)  
-1.0  
V
IC=-1mA, VCE=-5V*  
Static Forward Current Transfer Ratio hFE  
100  
100  
100  
50  
IC=-1mA, VCE=-5V  
IC=-250mA,VCE=-5V*  
IC=-500mA, VCE=-5V*  
IC=-1A, VCE=-5V*  
300  
Transition Frequency  
Output Capacitance  
fT  
50  
MHz IC=-50mA, VCE=-10V  
f=100MHz  
Cobo  
5
pF VCB=-10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
For typical Characteristics graphs see FMMT593 datasheet  
3 - 94  

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