Datasheet > FCX589

FCX589

更新时间： 2024-11-21 12:33:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关
页数	文件大小	规格书
2页	118K
描述
PNP silicon planar medium

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中文翻译

获取价格

数据手册

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FCX589 数据手册

SSMMDD TTyyppee

Product specification

FCX589

Features

SOT-89

Unit: mm

PNP silicon planar medium.

+0.1

4.50

-0.1

+0.1

1.50

-0.1

+0.1

1.80

-0.1

+0.1

0.48

-0.1

+0.1

0.53

-0.1

+0.1

0.44

-0.1

1. Base

+0.1

3.00

-0.1

2. Collector

3. Emiitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-50

-30

-5

Unit

Peak pulse current

-1

Continuous collector current

I^CM

-2

Base current

I^B

-200

Power dissipation

P^tot

Operating and storage temperature range

T^j,T^stg

-65 to +150

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中文翻译

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与FCX589相关器件

型号	品牌	获取价格	描述	数据表
FCX589TA	DIODES	获取价格	SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR
FCX589TC	DIODES	获取价格	Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3
FCX591	DIODES	获取价格	SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
FCX591	HTSEMI	获取价格	TRANSISTOR (PNP)
FCX591	TYSEMI	获取价格	Power Collector dissipation: PC=1W, Continuous Collector Current: IC=-1A
FCX591	ZETEX	获取价格	PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR
FCX591	LGE	获取价格	双极型晶体管
FCX591	CJ	获取价格	SOT-89-3L
FCX591	KEXIN	获取价格	PNP Transistor
FCX591	HOTTECH	获取价格	SOT-89