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FCI11N60 PDF预览

FCI11N60

更新时间: 2024-09-17 21:55:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 581K
描述
600V N-Channel MOSFET

FCI11N60 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:I2PAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.33雪崩能效等级(Eas):340 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):11 A最大漏极电流 (ID):11 A
最大漏源导通电阻:0.38 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):125 W
最大脉冲漏极电流 (IDM):33 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FCI11N60 数据手册

 浏览型号FCI11N60的Datasheet PDF文件第2页浏览型号FCI11N60的Datasheet PDF文件第3页浏览型号FCI11N60的Datasheet PDF文件第4页浏览型号FCI11N60的Datasheet PDF文件第5页浏览型号FCI11N60的Datasheet PDF文件第6页浏览型号FCI11N60的Datasheet PDF文件第7页 
TM  
SuperFET  
FCI11N60  
600V N-Channel MOSFET  
Features  
Description  
650V @T = 150°C  
SuperFETTM is, Farichild’s proprietary, new generation of high  
voltage MOSFET family that is utilizing an advanced charge  
balance mechanism for outstanding low on-resistance and  
lower gate charge performance.  
J
Typ. R  
= 0.32  
DS(on)  
Ultra Low Gate Charge (typ. Q = 40nC)  
g
Low Effective Output Capacitance (typ. C eff. = 95pF)  
This advanced technology has been tailored to minimize con-  
duction loss, provide superior switching performance, and with-  
stand extreme dv/dt rate and higher avalanche energy.  
Consequently, SuperFET is very suitable for various AC/DC  
power conversion in switching mode operation for system min-  
iaturization and higher efficiency.  
oss  
100% Avalanche Tested  
D
!
"
! "  
"
G!  
"
G D S  
!
S
Absolute Maximum Ratings  
Symbol  
Parameter  
FCI11N60  
Unit  
V
Drain-Source Voltage  
Drain Current  
600  
V
DSS  
I
- Continuous (T = 25°C)  
11  
7
A
A
D
C
- Continuous (T = 100°C)  
C
(Note 1)  
I
Drain Current  
- Pulsed  
A
DM  
33  
± 30  
340  
11  
V
E
Gate-Source voltage  
V
mJ  
A
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
I
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
12.5  
4.5  
mJ  
V/ns  
AR  
dv/dt  
P
Power Dissipation  
(T = 25°C)  
- Derate above 25°C  
125  
1.0  
W
W/°C  
D
C
T
T
T
Operating and Storage Temperature Range  
-55 to +150  
300  
°C  
°C  
J, STG  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
L
Thermal Characteristics  
Symbol  
Parameter  
FCI11N60  
1.0  
Unit  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
62.5  
©2005 Fairchild Semiconductor Corporation  
FCI11N60 Rev. A  
1
www.fairchildsemi.com  

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