Datasheet > FCHD125N65S3R0-F155

FCHD125N65S3R0-F155

更新时间： 2024-11-10 11:13:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	333K
描述
功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，24 A，125 mΩ，TO-247AD

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FCHD125N65S3R0

MOSFET – Power, N-Channel,

SUPERFET⁾III, Easy Drive,

650 V, 24 A, 125 mW

Description

SUPERFET III MOSFET is ON Semiconductor’s brand-new high

voltage super-junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on-resistance and lower gate

charge performance. This advanced technology is tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET

Easy drive series helps manage EMI issues and allows for easier

design implementation.

www.onsemi.com

MAX

I MAX

DSS

DS(ON)

650 V

125 mW @ 10 V

24 A

Features

• 700 V @ T = 150°C

• Typ. R

= 105 mW

DS(on)

• Ultra Low Gate Charge (Typ. Q = 46 nC)

• Low Effective Output Capacitance (Typ. C

• 100% Avalanche Tested

= 439 pF)

oss(eff.)

N-Channel MOSFET

• These Devices are Pb−Free, Halogen Free/BFR Free

and are RoHS Compliant

Applications

• Telecom / Server Power Supplies

• Industrial Power Supplies

• UPS / Solar

TO−247AD

CASE 340AL

MARKING DIAGRAM

FCHD125

N65S3R0

AYWWG

FCHD125N65S3R0 = Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

July, 2019 − Rev. 1

FCHD125N65S3R0/D

12 3 4 5 6 7...10

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