Datasheet > FCHD190N65S3R0-F155

FCHD190N65S3R0-F155

更新时间： 2024-09-18 11:14:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	322K
描述
功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，17 A，190 mΩ，TO-247AD

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

FCHD190N65S3R0-F155 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
Factory Lead Time：	4 weeks	风险等级：	2.07
Is Samacsys：	N	JESD-609代码：	e3
端子面层：	Tin (Sn)	Base Number Matches：	1

FCHD190N65S3R0-F155 数据手册

浏览型号FCHD190N65S3R0-F155的Datasheet PDF文件第2页

浏览型号FCHD190N65S3R0-F155的Datasheet PDF文件第3页

浏览型号FCHD190N65S3R0-F155的Datasheet PDF文件第4页

浏览型号FCHD190N65S3R0-F155的Datasheet PDF文件第5页

浏览型号FCHD190N65S3R0-F155的Datasheet PDF文件第6页

FCHD190N65S3R0

MOSFET – Power, N-Channel,

SUPERFET⁾III, Easy Drive,

650 V, 17 A, 190 mW

Description

SUPERFET III MOSFET is ON Semiconductor’s brand-new high

voltage super-junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on-resistance and lower gate

charge performance. This advanced technology is tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET

Easy drive series helps manage EMI issues and allows for easier

design implementation.

www.onsemi.com

MAX

I MAX

DSS

DS(ON)

650 V

190 mW @ 10 V

17 A

Features

• 700 V @ T = 150°C

• Typ. R

= 159 mW

DS(on)

• Ultra Low Gate Charge (Typ. Q = 33 nC)

• Low Effective Output Capacitance (Typ. C

• 100% Avalanche Tested

= 300 pF)

oss(eff.)

POWER MOSFET

• These Devices are Pb−Free, Halogen Free/BFR Free

and are RoHS Compliant

Applications

• Computing / Display Power Supplies

• Telecom / Server Power Supplies

• Industrial Power Supplies

TO−247AD

CASE 340AL

• Lighting / Charger / Adapter

MARKING DIAGRAM

FCHD190

N65S3R0

AYWWG

FCHD190N65S3R0 = Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

July, 2019 − Rev. 2

FCHD190N65S3R0/D

12 3 4 5 6 7...10

中文翻译

下载PDF

与FCHD190N65S3R0-F155相关器件

型号	品牌	获取价格	描述	数据表
FCHP	VISHAY	获取价格	High Frequency 60 GHz High Power 1 W Thin Film Surface Mount Chip Resistor
FCHS08A045	NIEC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 45V V(RRM), Silicon, PLASTIC, SIMILAR T
FCHS08A08	NIEC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 80V V(RRM), Silicon, PLASTIC, SIMILAR T
FCHS08A12	NIEC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 120V V(RRM), Silicon, PLASTIC, SIMILAR
FCHS08A12	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
FCHS10A045	NIEC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, PLASTIC, SIMILAR
FCHS10A045	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
FCHS10A065	NIEC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 65V V(RRM), Silicon, PLASTIC, SIMILAR
FCHS10A065	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
FCHS10A08	NIEC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 80V V(RRM), Silicon, PLASTIC, SIMILAR