Datasheet > FCH165N60E

FCH165N60E

更新时间： 2023-09-03 20:29:32

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	438K
描述
功率 MOSFET，N 沟道，SUPERFET® II，Easy Drive，600 V，23 A，165 mΩ，TO-247

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FCH165N60E 数据手册

MOSFET – N-Channel,

SUPERFET⁾II, Easy-Drive

600 V, 23 A, 165 mW

FCH165N60E

Description

SUPERFET II MOSFET is ON Semiconductor’s brand−new high

voltage super−junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on−resistance and lower gate

charge performance. This technology is tailored to minimize

conduction loss, provide superior switching performance, dv/dt rate

and higher avalanche energy. Consequently, SUPERFET II MOSFET

easy−drive series offers slightly slower rise and fall times compared to

the SUPERFET II MOSFET series. Noted by the “E” part number

suffix, this family helps manage EMI issues and allows for easier

design implementation. For faster switching in applications where

switching losses must be at an absolute minimum, please consider

the SUPERFET II MOSFET series.

www.onsemi.com

MAX

I MAX

DS(ON)

600 V

165 mW @ 10 V

23 A

Features

• Typ. R

= 132 mW

• 650 V @ T = 150°C

DS(on)

• Ultra Low Gate Charge (Typ. Q = 57 nC)

N-CHANNEL MOSFET

• Low Effective Output Capacitance (Typ. C

• 100% Avalanche Tested

= 204 pF)

oss(eff.)

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Telecom / Sever Power Supplies

• Industrial Power Supplies

TO−247−3LD

CASE 340CK

MARKING DIAGRAM

$Y&Z&3&K

FCH

165N60E

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

FCH165N60E = Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

December, 2019 − Rev. 3

FCH165N60E/D

12 3 4 5 6 7...10

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