Datasheet > FCH125N60E

FCH125N60E

更新时间： 2023-09-03 20:39:13

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	442K
描述
功率 MOSFET，N 沟道，SUPERFET® II，Easy Drive，600 V，29 A，125 mΩ，TO-247

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FCH125N60E 数据手册

FCH125N60E

TYPICAL CHARACTERISTICS

100

*Notes:

1. V = 20 V

2. 250 ms Pulse Test

150^oC

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

25^oC

*Notes:

1. 250 ms Pulse Test

2. T = 25°C

−55 C

0.3

V_DS, Drain−Source Voltage[V]

V_GS, Gate−Source Voltage[V]

Figure 2. Transfer Characteristics

Figure 1. On−Region Characteristics

100

0.3

0.2

0.1

0.0

*Note: T _C= 25^oC

*Notes:

1. V = 0 V

2. 250 ms Pulse Test

150^oC

25^oC

V_GS= 10V

V_GS= 20V

0.1

−55 C

0.01

0.001

0.0

0.3

0.6

0.9

1.2

1.5

100

V_SD, Body Diode Forward Voltage [V]

I_D, Drain Current [A]

Figure 4. Body Diode Forward Voltage Variation

vs. Source Current and Temperature

Figure 3. On−Resistance Variation vs. Drain

Current and Gate Voltage

100000

*Note: I_D= 14.5A

_DS= 120V

10000

1000

100

C_iss

_DS= 300V

C_oss

V_DS= 480V

*Notes:

1. V = 0 V

2. f = 1 MHz

= C + C (C = shorted)

gs gd ds

iss

oss

rss

C_rss

= C + C

= C

0.1

10⁻¹

10³

Q_g, Total Gate Charge [nC]

V_DS, Drain−Source Voltage [V]

Figure 6. Gate Charge Characteristics

Figure 5. Capacitance Characteristics

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