FA01215

更新时间： 2024-11-26 22:31:39

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
2页	18K
描述
GaAs FET HYBRID IC

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FA01215 数据手册

MITSUBISHI SEMICONDUCTOR GaAs FET

FA01215

GaAs FET HYBRID IC

DESCRIPTION

FA01215 is RF Hybrid IC designed for 900MHz band

Unit:mm

14.7

small size handheld radio.

14.2

3.5

0.6

FEATURES

• Low voltage

3.0V

• High gain

24dB(typ.)

50%

• High efficiency

• High power

34.5dBm

APPLICATION

GSM IV

2.25 2.5

2.5

2.5 1.95

0.25±0.1

RF INPUT

VG1,2

VD1

VD2

0.5±0.15

RF OUTPUT

GND(FIN)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Ratings

4.5

Condition

PO£34.5dBm

ZG=ZL=50W

Unit

25˚C

Drain voltage

dBm

˚C

Input power

25˚C

–

TC(op)

Tstg

-20 to +85

-30 to +90

Operation case temperature.

Storage temperature.

˚C

Note: Each maximum ratings is guaranteed independently and P.W.=580µs,duty=1/8 operation.

ELECTRICAL CHARACTERISTICS (Ta=25˚C)

Limits

Symbol

Parameter

Test conditions

Unit

Min

Typ

–

Max

915

–

890

34.5

MHz

Frequency

Output power

Note1

Note2

–

dBm

–

Total efficiency

Total gate current

Return loss

-3

Igt

–

rin

-6

Note3

-30

-60

2nd harmonics, 3rd harmonics

Stability

2fo,3fo

OSC.T

VSWR.T

dBc

–

Note4

Note5

Load VSWR tolerance

No degradation or destroy

Note1: Pin=13dBm,VD1=VD2=3.0V(Pulse: P.W.=580µs,duty=1/8),VG1,2=-2.0V,ZG=ZL=50W

Note2: PO=34.5dBm(Pin controlled),VD1=VD2=3.0V(Pulse: P.W.=580µs,duty=1/8),VG1,2=-2.0V,ZG=ZL=50W

Note3: PO=34.5dBm(Pin controlled),VD1=VD2=3.0V(DC),VG1,2=-2.0V,ZG=ZL=50W

Note4: PO=0~34.5dBm(Pin controlled),VD1=VD2=3.0V(DC),VG1,2=-2.0V,r L=3:1(all phase),ZG=50W

Note5: PO=34.5dBm(Pin controlled),VD1=VD2=4.5V(Pulse:P.W.=580µs,duty=1/8),VG1,2=-2.0V,r L=6:1(all phase),ZG=50W

Nov. ´97

中文翻译

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