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F60UP20DN PDF预览

F60UP20DN

更新时间: 2024-11-21 12:56:43
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
3页 784K
描述
60.0 Ampere,200 Volt Common Cathode Fast Recovery Epitaxial Diode

F60UP20DN 数据手册

 浏览型号F60UP20DN的Datasheet PDF文件第2页浏览型号F60UP20DN的Datasheet PDF文件第3页 
F60UP20DN  
®
F60UP20DN  
Pb Free Plating Product  
60.0 Ampere,200 Volt Common Cathode Fast Recovery Epitaxial Diode  
TO-3PB/TO-3PN  
APPLICATION  
Cathode(Bottom Side Metal Heatsink)  
· Freewheeling, Snubber, Clamp  
· Inversion Welder  
· PFC  
· Plating Power Supply  
· Ultrasonic Cleaner and Welder  
· Converter & Chopper  
· UPS  
Anode  
PRODUCT FEATURE  
Cathode  
· Ultrafast Recovery Time  
Internal Configuration  
Anode  
· Soft Recovery Characteristics  
· Low Recovery Loss  
Base Backside  
· Low Forward Voltage  
· High Surge Current Capability  
· Low Leakage Current  
GENERAL DESCRIPTION  
F60UP20DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.  
ABSOLUTE MAXIMUM RATINGS  
TC=25°C unless otherwise specified  
Symbol  
Parameter  
Test Conditions  
Values  
200  
200  
30  
Unit  
V
VR  
Maximum D.C. Reverse Voltage  
Maximum Repetitive Reverse Voltage  
VRRM  
V
TC=100°C, Per Diode  
A
IF(AV)  
Average Forward Current  
TC=100°C, Per Package  
60  
A
IF(RMS)  
IFSM  
RMS Forward Current  
Non-Repetitive Surge Forward Current  
Power Dissipation  
TC=100°C, Per Diode  
53  
A
A
300  
TJ=45°C, t=10ms, 50Hz, Sine  
PD  
156  
-40 to +150  
-40 to +150  
1.1  
W
°C  
TJ  
Junction Temperature  
Storage Temperature Range  
Module-to-Sink  
TSTG  
Torque  
RθJC  
Weight  
°C  
RecommendedM3)  
N·m  
°C /W  
g
Thermal Resistance  
Junction-to-Case  
0.8  
6.0  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise specified  
Symbol  
Parameter  
Test Conditions  
VR=200V  
Min. Typ. Max.  
Unit  
25  
µA  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
IRM  
Reverse Leakage Current  
250  
µA  
VR=200V, TJ=125°C  
IF=30A  
0.86  
--  
1.1  
0.95  
--  
V
V
VF  
Forward Voltage  
IF=30A, TJ=125°C  
trr  
Reverse Recovery Time  
IF=1A, VR=30V, diF/dt=-200A/μs  
VR=100V, IF=30A  
22  
26  
2.3  
40  
4.1  
ns  
ns  
A
trr  
Reverse Recovery Time  
--  
diF/dt=-200A/μs, TJ=25°C  
IRRM  
trr  
Max. Reverse Recovery Current  
Reverse Recovery Time  
--  
VR=100V, IF=30A  
--  
ns  
A
diF/dt=-200A/μs, TJ=125°C  
IRRM  
Max. Reverse Recovery Current  
--  
Rev.05  
© 2006 Thinki Semiconductor Co.,Ltd.  
Page 1/3  
http://www.thinkisemi.com/  

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