F60UP20DN
Pb
F60UP20DN
Pb Free Plating Product
60.0 Ampere,200 Volt Common Cathode Fast Recovery Epitaxial Diode
TO-3PB/TO-3PN
APPLICATION
Cathode(Bottom Side Metal Heatsink)
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
Anode
PRODUCT FEATURE
Cathode
· Ultrafast Recovery Time
Internal Configuration
Anode
· Soft Recovery Characteristics
· Low Recovery Loss
Base Backside
· Low Forward Voltage
—
· High Surge Current Capability
· Low Leakage Current
GENERAL DESCRIPTION
F60UP20DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
200
200
30
Unit
V
VR
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
VRRM
V
TC=100°C, Per Diode
A
IF(AV)
Average Forward Current
TC=100°C, Per Package
60
A
IF(RMS)
IFSM
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
TC=100°C, Per Diode
53
A
A
300
TJ=45°C, t=10ms, 50Hz, Sine
PD
156
-40 to +150
-40 to +150
1.1
W
°C
TJ
Junction Temperature
Storage Temperature Range
Module-to-Sink
TSTG
Torque
RθJC
Weight
°C
Recommended(M3)
N·m
°C /W
g
Thermal Resistance
Junction-to-Case
0.8
6.0
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
VR=200V
Min. Typ. Max.
Unit
25
µA
--
--
--
--
--
--
--
--
--
--
--
IRM
Reverse Leakage Current
250
µA
VR=200V, TJ=125°C
IF=30A
0.86
--
1.1
0.95
--
V
V
VF
Forward Voltage
IF=30A, TJ=125°C
trr
Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs
VR=100V, IF=30A
22
26
2.3
40
4.1
ns
ns
A
trr
Reverse Recovery Time
--
diF/dt=-200A/μs, TJ=25°C
IRRM
trr
Max. Reverse Recovery Current
Reverse Recovery Time
--
VR=100V, IF=30A
--
ns
A
diF/dt=-200A/μs, TJ=125°C
IRRM
Max. Reverse Recovery Current
--
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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