Datasheet > F6102NTGK8

F6102NTGK8

更新时间： 2024-11-22 01:04:31

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
2页	166K
描述
Ka-Band SATCOM Receiver IC

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F6102NTGK8 数据手册

Ka-Band SATCOM Receiver IC

17.5GHz to 21.5GHz

F6102 Advance

Short-Form Datasheet

Description

Features

The F6102 is an 8-element receiver silicon IC designed using a

SiGe BiCMOS process for Ka-Band SATCOM phased array

applications. The core IC has 6-bit phase control coupled with 30dB

gain control on each channel to achieve fine beam steering and

gain compensation between radiating elements. The device has

16dB nominal electric gain and -30dBm IP1dB. The core chip

achieves an RMS phase error of 3° and RMS gain error of 0.3dB

over the frequency of operation. The typical total power con-

sumption is 0.32W (40mW per channel).

17.5GHz to 21.5GHz operation

8 radiation channels

6-bit phase control

20ns typical gain settling time

20ns typical phase settling time

3° typical RMS phase error

0.3dB typical RMS gain error

30dB gain attenuation range

5-bit IC address

Integrated proportional-to-absolute temperature (PTAT)

sensor with external biasing

Competitive Advantage

-40°C to +95°C internal temperature sensor

Programmable 4-state on-chip memory

Supply voltage: +2.1V to +2.5V

-40°C to +95°C ambient operating temperature range

27°C typical ambient operating temperature

5mm x 5mm, 40-QFN package

High integration

Orthogonality of phase and amplitude control

Advanced Serial Peripheral Interface (SPI) with 4-state

memory

Superior channel-to-channel isolation

Minimal footprint

Block Diagram

Typical Applications

Ka-Band SATCOM

Aerospace and Maritime

Beam Steering

Figure 1. Block Diagram

RF1

RF8

RF7

Test and Measurement

RF2

RF3

RF4

RF6

RF5

RFC

September 27, 2018

中文翻译

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