Datasheet > F6101EVS

F6101EVS

更新时间： 2024-11-22 01:04:31

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
2页	165K
描述
Ku-Band SATCOM Receiver IC

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F6101EVS 数据手册

Ku-Band SATCOM Receiver IC

10GHz to 14GHz

F6101 Advance

Short-Form Datasheet

Description

Features

The F6101 is an 8-channel receiver silicon IC designed using a

SiGe BiCMOS process for Ku-Band SATCOM phased array

applications. The core IC has 6-bit phase control coupled with more

than 30dB gain control on each channel to achieve fine beam

steering and gain compensation between channels. The device

has 15.5dB nominal electric gain and -23dBm IP1dB. The core chip

achieves an RMS phase error of 2.5° and RMS gain error of 0.25dB

over the frequency of operation. The typical total power con-

sumption is 0.34W (43mW per channel).

10GHz to 14GHz operation

8 radiation channels

6-bit phase control

20ns typical gain settling time

20ns typical phase settling time

2.5° typical RMS phase error

0.25dB typical RMS gain error

30dB gain attenuation range

5-bit IC address

Integrated proportional-to-absolute temperature (PTAT)

sensor with external biasing

Competitive Advantage

-40°C to +95°C internal temperature sensor

Programmable 4-state on-chip memory

Supply voltage: +2.1V to +2.5V

-40°C to +95°C ambient operating temperature range

27°C typical ambient operating temperature

5mm x 5mm, 40-QFN package

High integration

Orthogonality of phase and amplitude control

Advanced Serial Peripheral Interface (SPI) with 4-state

memory

Superior channel-to-channel isolation

Minimal footprint

Block Diagram

Typical Applications

Ku-Band SATCOM

Aerospace and Maritime

Weather Radar

Figure 1. Block Diagram

RF1

RF8

RF7

Beam Steering

Test and Measurement

RF2

RF3

RF4

RF6

RF5

RFC

September 27, 2018

中文翻译

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